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5962-9690001H9X

Description
Memory Circuit, 128KX16, CMOS, CQFP68, 22.40 MM, CERAMIC, QFP-68
Categorystorage    storage   
File Size982KB,11 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

5962-9690001H9X Overview

Memory Circuit, 128KX16, CMOS, CQFP68, 22.40 MM, CERAMIC, QFP-68

5962-9690001H9X Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid1976916743
package instruction22.40 MM, CERAMIC, QFP-68
Reach Compliance Codeunknown
ECCN codeEAR99
kg CO2e/kg12
Average Weight (mg)3289.9
CO2e (mg)39478.799
Other featuresSRAM IS ORGANISED AS 128K X 16 OR 256K X 8; FLASH CAN ALSO BE ORGANISED AS 256K X 8
JESD-30 codeS-CQFP-G68
JESD-609 codee4
length23.88 mm
memory density2097152 bit
Memory IC TypeMEMORY CIRCUIT
memory width16
Number of functions1
Number of terminals68
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize128KX16
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeQFP
Package shapeSQUARE
Package formFLATPACK
Certification statusNot Qualified
Filter levelMIL-STD-883
Maximum seat height3.56 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceGOLD
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationQUAD
width23.88 mm
WSF128K16-XXX
128Kx16 SRAM / NOR FLASH MODULE (SMD 5962-96900**)
FEATURES

Access Times of 35ns (SRAM) and 70ns (FLASH)

Access Times of 70ns (SRAM) and 120ns (FLASH)

Packaging
• 66-pin, PGA Type, 1.075 inch square HIP, Hermetic
Ceramic HIP (Package 400)
• 68 lead, Hermetic CQFP (G1U)1, 22.4mm (0.880 inch)
square (Package 519). Designed to fit JEDEC 68 lead
0.990” CQFJ footprint (FIGURE 2)

128Kx16 5V SRAM

128Kx16 5V FLASH

Organized as 128Kx16 of SRAM and 128Kx16 of Flash
Memory with separate Data Buses

Both blocks of memory are User Configurable as 256Kx8

Low Power CMOS

Commercial, Industrial and Military Temperature Ranges

TTL Compatible Inputs and Outputs

Built-in Decoupling Caps and Multiple Ground Pins for Low
Noise Operation

Weight
• WSF128K16-H1X — 13 grams typical
• WSF128K16-XG1UX
1
— 5 grams typical
FLASH MEMORY FEATURES

100,000 Erase/Program Cycles minimum

Sector Architecture
• 8 equal size sectors of 16K bytes each
• Any combination of sectors can be concurrently erased.
Also supports full chip erase

5 Volt Programming

Embedded Erase and Program Algorithms

Page Program Operation and Internal Program Control
Time.
Note: For programming information and waveforms refer to Flash Programming 1M5 Application
Note AN0036
Note 1: Package not recommended for new designs
* This product is subject to change without notice
** For reference only. See SMD table page 10
FIGURE 1 – PIN CONFIGURATION FOR
WSF128K16-XH1X
TOP VIEW
1
SD
8
SD
9
SD
10
A
13
A
14
A
15
A
16
NC
SD
0
SD
1
SD
2
11
22
12
SWE
2
#
SCS
2
#
GND
SD
11
A
10
A
11
A
12
V
CC
SCS
1
#
NC
SD
3
33
23
SD
15
SD
14
SD
13
SD
12
OE#
NC
SWE
1
#
SD
7
SD
6
SD
5
SD
4
FD
8
FD
9
FD
10
A
6
A
7
NC
A
8
A
9
FD
0
FD
1
FD
2
44
34
V
CC
FCS
2
#
FWE
2
#
FD
11
A
3
A
4
A
5
FWE
1
#
FCS
1
#
GND
FD
3
55
45
FD
15
FD
14
FD
13
FD
12
A
0
A
1
A
2
FD
7
FD
6
FD
5
56
PIN DESCRIPTION
FD0-15
SD0-15
A0-16
SWE1-2#
SCS1-2#
OE#
V
CC
GND
NC
FWE1-2#
FCS1-2#
Flash Data Inputs/Outputs
SRAM Data Inputs/Outputs
Address Inputs
SRAM Write Enable
SRAM Chip Select
Output Enable
Power Supply
Ground
Not Connected
Flash Write Enable
Flash Chip Select
BLOCK DIAGRAM
S W E
1
# S CS
1
#
OE#
A
0-16
128K x 8
SRAM
128K x 8
SRAM
128K x 8
FLASH
128K x 8
FLASH
S W E
2
# S CS
2
#
F W E
1
# F CS
1
#
F W E
2
# F CS
2
#
8
8
8
8
FD
4
66
SD
0-7
SD
8-15
FD
0-7
FD
8-15
Microsemi Corporation reserves the right to change products or specifications without notice.
June 2012
Rev. 8
© 2012 Microsemi Corporation. All rights reserved.
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
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