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IXFX80N50P

Description
80 A, 500 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Categorysemiconductor    Discrete semiconductor   
File Size222KB,5 Pages
ManufacturerIXYS ( Littelfuse )
Websitehttp://www.ixys.com/
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IXFX80N50P Overview

80 A, 500 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA

IXFX80N50P Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage500 V
Processing package descriptionTO-264, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingtin silver copper
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Shell connectionDRAIN
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current80 A
Rated avalanche energy3500 mJ
Maximum drain on-resistance0.0650 ohm
Maximum leakage current pulse200 A
PolarHV
TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK 80N50P
IXFX 80N50P
V
DSS
I
D25
t
rr
R
DS(on)
= 500 V
= 80 A
65 mΩ
200 ns
Symbol
V
DSS
V
DGR
V
GSM
V
GSM
I
D25
I
L
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
M
d
Weight
Test Conditions
T
J
= 25° C to 150° C
T
J
= 25° C to 150° C; R
GS
= 1 MΩ
Transient
Continuous
T
C
= 25° C
Lead Current Limit, RMS
T
C
= 25° C, pulse width limited by T
JM
T
C
= 25° C
T
C
= 25° C
T
C
= 25° C
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
,
T
J
150° C, R
G
= 2
T
C
= 25° C
Maximum Ratings
500
500
±
40
±
30
80
75
200
80
80
3.5
20
1040
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°
C
°
C
N/lb
TO-264 (IXFK)
G
D
D (TAB)
S
PLUS247 (IXFX)
D
S
D (TAB)
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting force (PLUS247)
Mounting torque (TO-264)
TO-264
PLUS247
300
260
20..120/4.5..25
G = Gate
D = Drain
S = Source
Tab = Collector
1.13/10 Nm/lb.in.
10
6
g
g
Features
l
l
Symbol
Test Conditions
(T
J
= 25° C unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 500
µA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
±
30 V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
T
J
= 125° C
Characteristic Values
Min. Typ.
Max.
500
3.0
5.0
±
200
25
2
65
V
V
nA
µA
mA
mΩ
l
International standard package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
l
l
l
Easy to mount
Space savings
High power density
© 2006 IXYS All rights reserved
DS99437E(03/06)

IXFX80N50P Related Products

IXFX80N50P IXFK80N50P
Description 80 A, 500 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA 80 A, 500 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Number of terminals 3 3
Minimum breakdown voltage 500 V 500 V
Processing package description TO-264, 3 PIN TO-264, 3 PIN
Lead-free Yes Yes
EU RoHS regulations Yes Yes
state ACTIVE ACTIVE
packaging shape Rectangle Rectangle
Package Size Flange mounting Flange mounting
Terminal form THROUGH-hole THROUGH-hole
terminal coating tin silver copper tin silver copper
Terminal location single single
Packaging Materials Plastic/Epoxy Plastic/Epoxy
structure Single WITH BUILT-IN diode Single WITH BUILT-IN diode
Shell connection DRAIN DRAIN
Number of components 1 1
transistor applications switch switch
Transistor component materials silicon silicon
Channel type N channel N channel
field effect transistor technology Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT
Transistor type universal power supply universal power supply
Maximum leakage current 80 A 80 A
Rated avalanche energy 3500 mJ 3500 mJ
Maximum drain on-resistance 0.0650 ohm 0.0650 ohm
Maximum leakage current pulse 200 A 200 A
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