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FDS3570: Description3000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET; CategoryDiscrete semiconductor The transistor; File Size30KB，2 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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FDS3570 Overview

3000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

FDS3570 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Fairchild
Parts packaging code	SOT
package instruction	SMALL OUTLINE, R-PDSO-G8
Contacts	8
Reach Compliance Code	unknow
ECCN code	EAR99
Is Samacsys	N
Other features	LOGIC LEVEL COMPATIBLE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	80 V
Maximum drain current (Abs) (ID)	9 A
Maximum drain current (ID)	9 A
Maximum drain-source on-resistance	0.02 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	2.5 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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FDS3570 Related Products

	FDS3570	AN-7004	FDS3670	FDS2570
Description	3000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	3000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	3000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	3000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Number of components	1	1	1	1
Number of terminals	8	8	8	8
surface mount	YES	Yes	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Is it Rohs certified?	conform to	-	conform to	conform to
Maker	Fairchild	-	Fairchild	Fairchild
Parts packaging code	SOT	-	SOT	SOT
package instruction	SMALL OUTLINE, R-PDSO-G8	-	SOIC-8	SOIC-8
Contacts	8	-	8	8
Reach Compliance Code	unknow	-	unknown	unknow
ECCN code	EAR99	-	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	80 V	-	100 V	150 V
Maximum drain current (Abs) (ID)	9 A	-	6.3 A	4 A
Maximum drain current (ID)	9 A	-	6.3 A	4 A
Maximum drain-source on-resistance	0.02 Ω	-	0.03 Ω	0.08 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8	-	R-PDSO-G8	R-PDSO-G8
JESD-609 code	e3	-	e3	e3
Humidity sensitivity level	1	-	1	1
Operating mode	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	-	150 °C	150 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	-	260	260
Polarity/channel type	N-CHANNEL	-	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	2.5 W	-	2.5 W	2.5 W
Certification status	Not Qualified	-	Not Qualified	Not Qualified
Terminal surface	Matte Tin (Sn)	-	Matte Tin (Sn)	Matte Tin (Sn)
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED

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