AN-7004 datasheet, PDF - EEWORLD Datasheet

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AN-7004: Description3000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET; Categorysemiconductor Discrete semiconductor; File Size30KB，2 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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AN-7004 Overview

3000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

AN-7004 Parametric

Parameter Name	Attribute value
Number of terminals	8
Minimum breakdown voltage	200 V
Processing package description	SOIC-8
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	MATTE TIN
Terminal location	DUAL
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE WITH BUILT-IN DIODE
Number of components	1
transistor applications	SWITCHING
Transistor component materials	SILICON
Channel type	N-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	GENERAL PURPOSE SMALL SIGNAL
Maximum leakage current	3 A
Maximum drain on-resistance	0.1300 ohm

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AN-7004 Related Products

	AN-7004	FDS3670	FDS3570	FDS2570
Description	3000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	3000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	3000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	3000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Number of terminals	8	8	8	8
surface mount	Yes	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
Number of components	1	1	1	1
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Is it Rohs certified?	-	conform to	conform to	conform to
Maker	-	Fairchild	Fairchild	Fairchild
Parts packaging code	-	SOT	SOT	SOT
package instruction	-	SOIC-8	SMALL OUTLINE, R-PDSO-G8	SOIC-8
Contacts	-	8	8	8
Reach Compliance Code	-	unknown	unknow	unknow
ECCN code	-	EAR99	EAR99	EAR99
Configuration	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	-	100 V	80 V	150 V
Maximum drain current (Abs) (ID)	-	6.3 A	9 A	4 A
Maximum drain current (ID)	-	6.3 A	9 A	4 A
Maximum drain-source on-resistance	-	0.03 Ω	0.02 Ω	0.08 Ω
FET technology	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	-	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8
JESD-609 code	-	e3	e3	e3
Humidity sensitivity level	-	1	1	1
Operating mode	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	-	150 °C	150 °C	150 °C
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	-	260	260	260
Polarity/channel type	-	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	-	2.5 W	2.5 W	2.5 W
Certification status	-	Not Qualified	Not Qualified	Not Qualified
Terminal surface	-	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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