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FDS2570

Description
3000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size30KB,2 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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FDS2570 Overview

3000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

FDS2570 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeSOT
package instructionSOIC-8
Contacts8
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)375 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage150 V
Maximum drain current (Abs) (ID)4 A
Maximum drain current (ID)4 A
Maximum drain-source on-resistance0.08 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2.5 W
Maximum pulsed drain current (IDM)30 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

FDS2570 Related Products

FDS2570 AN-7004 FDS3670 FDS3570
Description 3000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 3000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 3000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 3000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Number of components 1 1 1 1
Number of terminals 8 8 8 8
surface mount YES Yes YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Is it Rohs certified? conform to - conform to conform to
Maker Fairchild - Fairchild Fairchild
Parts packaging code SOT - SOT SOT
package instruction SOIC-8 - SOIC-8 SMALL OUTLINE, R-PDSO-G8
Contacts 8 - 8 8
Reach Compliance Code unknow - unknown unknow
ECCN code EAR99 - EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 150 V - 100 V 80 V
Maximum drain current (Abs) (ID) 4 A - 6.3 A 9 A
Maximum drain current (ID) 4 A - 6.3 A 9 A
Maximum drain-source on-resistance 0.08 Ω - 0.03 Ω 0.02 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G8 - R-PDSO-G8 R-PDSO-G8
JESD-609 code e3 - e3 e3
Humidity sensitivity level 1 - 1 1
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C - 150 °C 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 - 260 260
Polarity/channel type N-CHANNEL - N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 2.5 W - 2.5 W 2.5 W
Certification status Not Qualified - Not Qualified Not Qualified
Terminal surface Matte Tin (Sn) - Matte Tin (Sn) Matte Tin (Sn)
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
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