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GBU6A_01

Description
6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size57KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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GBU6A_01 Overview

6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

GBU6A - GBU6M
GBU6A - GBU6M
Features
Glass passivated junction.
Surge overload rating: 175 amperes peak.
Reliable low cost construction utilizing
molded plastic technique.
Ideal for printed circuit board.
UL certified, UL #E111753.
+ ~
~
-
GBU
Bridge Rectifiers
Absolute Maximum Ratings*
Symbol
V
RRM
V
RMS
V
R
I
F(AV)
I
FSM
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
6A
Maximum Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
DC Reverse Voltage
(Rated V
R
)
Average Rectified Forward Current, @ T
A
= 100°C
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
50
35
50
6B
100
70
100
6D
200
140
200
Value
6G
400
280
400
6.0
175
-55 to +150
-55 to +150
6J
600
420
600
6K
800
560
800
6M
1000
700
1000
Units
V
V
V
A
A
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
R
θJL
Power Dissipation
Thermal Resistance, Junction to Ambient,* per leg
Thermal Resistance, Junction to Lead,** per leg
Parameter
Value
12
18.6
3.1
Units
W
°C/W
°C/W
*
Device mounted on PCB with 0.5 x 0.5" (12 x 12 mm).
**
Device mounted on Al plate with 2.6 x 1.4" x 0.06" (6,5 x 3.5 x 0.15 cm).
Electrical Characteristics
Symbol
V
F
I
R
T
A
= 25°C unless otherwise noted
Parameter
Forward Voltage, per element @ 6.0 A
Reverse Current, per element @ rated V
R
T
A
= 25°C
T
A
= 125°C
I
2
t rating for fusing
t < 8.35 ms
Device
1.0
5.0
500
127
Units
V
µA
µA
A
2
s
2001
Fairchild Semiconductor Corporation
GBU6A-GBU6M, Rev. C

GBU6A_01 Related Products

GBU6A_01 GBU6K GBU6M
Description 6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, SILICON, BRIDGE RECTIFIER DIODE
Brand Name - Fairchild Semiconduc Fairchild Semiconduc
Is it lead-free? - Lead free Lead free
Is it Rohs certified? - conform to conform to
Maker - Fairchild Fairchild
Parts packaging code - GBU GBU
package instruction - PLASTIC, GBU, 4 PIN R-PSFM-W4
Contacts - 4 4
Manufacturer packaging code - 4LD, GBU, THROUGH-HOLE, MOLDED PACKAGE 4LD, GBU, THROUGH-HOLE, MOLDED PACKAGE
Reach Compliance Code - _compli _compli
ECCN code - EAR99 EAR99
Other features - UL RECOGNIZED UL RECOGNIZED
Minimum breakdown voltage - 800 V 1000 V
Shell connection - ISOLATED ISOLATED
Configuration - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials - SILICON SILICON
Diode type - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) - 1 V 1 V
JESD-30 code - R-PSFM-W4 R-PSFM-W4
JESD-609 code - e3 e3
Maximum non-repetitive peak forward current - 175 A 175 A
Number of components - 4 4
Phase - 1 1
Number of terminals - 4 4
Maximum operating temperature - 150 °C 150 °C
Minimum operating temperature - -55 °C -55 °C
Maximum output current - 6 A 6 A
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation - 12 W 12 W
Certification status - Not Qualified Not Qualified
Maximum repetitive peak reverse voltage - 800 V 1000 V
surface mount - NO NO
Terminal surface - Matte Tin (Sn) Matte Tin (Sn)
Terminal form - WIRE WIRE
Terminal location - SINGLE SINGLE
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED
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