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KTX111T-Y

Description
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 2-Element, NPN and PNP, Silicon, TS6, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size64KB,4 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet Parametric Compare View All

KTX111T-Y Overview

Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 2-Element, NPN and PNP, Silicon, TS6, 6 PIN

KTX111T-Y Parametric

Parameter NameAttribute value
MakerKEC
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage30 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)40
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN AND PNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES
Including two devices in TS6.
(Thin Super Mini type with 6 pin)
Simplify circuit design.
G
A
F
K
1
KTX111T
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
E
B
K
6
Reduce a quantity of parts and manufacturing process.
2
5
DIM
A
B
C
D
E
D
F
G
H
I
J
3
4
MILLIMETERS
_
2.9 + 0.2
1.6+0.2/-0.1
_
0.70 + 0.05
+ 0.1
0.4 _
2.8+0.2/-0.3
_
1.9 + 0.2
0.95
_
0.16 + 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
C
J
Marking
6
5
4
Q1
Q2
h
FE
Rank
Type Name
Lot No.
B
1
2
3
1.
2.
3.
4.
5.
6.
Q
1
Q
1
Q
2
Q
2
Q
2
Q
1
EMITTER
BASE
COLLECTOR
EMITTER
BASE
COLLECTOR
1
2
3
Q1 MAXIMUM RATINGS (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
RATING
35
30
5
500
-500
UNIT
V
V
V
Q2 MAXIMUM RATINGS (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
RATING
-35
-30
-5
-500
500
UNIT
V
V
V
Q1, Q2 MAXIMUM RATINGS (Ta=25
CHARACTERISTIC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Package mounted on a ceramic board (600
)
SYMBOL
P
C
*
T
j
T
stg
0.8
)
RATING
0.9
150
-55 150
UNIT
W
2002. 1. 24
Revision No : 1
I
6
5
4
L
EQUIVALENT CIRCUIT (TOP VIEW)
G
K
L
H
J
TS6
1/4

KTX111T-Y Related Products

KTX111T-Y KTX111T-O
Description Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 2-Element, NPN and PNP, Silicon, TS6, 6 PIN Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 2-Element, NPN and PNP, Silicon, TS6, 6 PIN
Maker KEC KEC
package instruction SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Contacts 6 6
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.5 A 0.5 A
Collector-emitter maximum voltage 30 V 30 V
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE) 40 25
JESD-30 code R-PDSO-G6 R-PDSO-G6
Number of components 2 2
Number of terminals 6 6
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN AND PNP NPN AND PNP
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 300 MHz 300 MHz
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