LS311
MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems High Voltage Super-Beta Monolithic Dual NPN
The LS311 is a monolithic pair of NPN transistors
mounted in a single SOIC package. The monolithic dual
chip design reduces parasitics and gives better
performance while ensuring extremely tight matching.
The 8 Pin SOIC provides ease of manufacturing, and a
lower cost assembly option.
(See Packaging Information).
LS311 Features:
Very high gain
Tight matching
Low Output Capacitance
FEATURES
HIGH GAIN
TIGHT V
BE
MATCHING
HIGH f
t
ABSOLUTE MAXIMUM RATINGS
1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (One side)
Continuous Power Dissipation (Both sides)
Linear Derating factor (One side)
Linear Derating factor (Both sides)
Maximum Currents
Collector Current
MIN
‐‐
‐‐
‐‐
‐‐
‐‐
TYP
0.4
1
‐‐
‐‐
5
MAX
1
5
10
0.5
‐‐
UNITS
mV
µV/°C
nA
nA/°C
%
h
FE
≥ 150 @ 10µA‐1mA
|V
BE1
– V
BE2
|= 0.2mV TYP.
250MHz TYP. @ 1mA
‐65°C to +200°C
‐55°C to +150°C
250mW
500mW
2.3mW/°C
4.3mW/°C
10mA
CONDITIONS
I
C
= 10µA, V
CE
= 5V
I
C
= 10µA, V
CE
= 5V
T
A
= ‐55°C to +125°C
I
C
= 10µA, V
CE
= 5V
I
C
= 10µA, V
CE
= 5V
T
A
= ‐55°C to +125°C
I
C
= 10µA, V
CE
= 5V
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
|V
BE1
– V
BE2
|
Base Emitter Voltage Differential
∆|(V
BE1
– V
BE2
)| / ∆T
Base Emitter Voltage Differential
Change with Temperature
|I
B1
– I
B2
|
Base Current Differential
|∆ (I
B1
– I
B2
)|/°C
Base Current Differential
Change with Temperature
h
FE1
/h
FE2
DC Current Gain Differential
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
BV
CBO
Collector to Base Voltage
45
BV
CEO
Collector to Emitter Voltage
45
BV
EBO
Emitter‐Base Breakdown Voltage
6.2
BV
CCO
Collector to Collector Voltage
100
150
DC Current Gain
h
FE
150
150
V
CE
(SAT)
Collector Saturation Voltage
‐‐
I
EBO
Emitter Cutoff Current
‐‐
I
CBO
Collector Cutoff Current
‐‐
C
OBO
Output Capacitance
‐‐
C
C1C2
Collector to Collector Capacitance
‐‐
I
C1C2
Collector to Collector Leakage Current
‐‐
f
T
Current Gain Bandwidth Product
200
NF
Narrow Band Noise Figure
‐‐
Click To Buy
TYP.
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
MAX.
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
0.25
0.2
0.2
2
2
0.5
‐‐
3
UNITS
V
V
V
V
V
nA
nA
pF
pF
nA
MHz
dB
CONDITIONS
I
C
= 10µA, I
E
= 0
I
C
= 10µA, I
B
= 0
I
E
= 10µA, I
C
= 0
2
I
C
= 10µA, I
E
= 0
I
C
= 10µA, V
CE
= 5V
I
C
= 100µA, V
CE
= 5V
I
C
= 1mA, V
CE
= 5V
I
C
= 1mA, I
B
= 0.1mA
I
E
= 0, V
CB
= 3V
I
E
= 0, V
CB
= 30V
I
E
= 0, V
CB
= 5V
V
CC
= 0V
V
CC
= ±45V
I
C
= 1mA, V
CE
= 5V
I
C
= 100µA, V
CE
= 5V, BW=200Hz, R
G
= 10KΩ,
f = 1KHz
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.
SOIC (Top View)
Available Packages:
LS311 in SOIC
LS311 available as bare die
Please contact Micross for full package and die dimensions:
Email:
chipcomponents@micross.com
Web:
www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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