SBH1245TL datasheet, PDF - EEWORLD Datasheet

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SBH1245TL: DescriptionHigh temperature schottky barrier diodes; CategoryDiscrete semiconductor diode; File Size345KB，3 Pages; ManufacturerSEMIKRON; Websitehttp://www.semikron.com

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SBH1245TL Overview

High temperature schottky barrier diodes

SBH1245TL Parametric

Parameter Name	Attribute value
package instruction	O-PALF-W2
Reach Compliance Code	compli
ECCN code	EAR99
application	GENERAL PURPOSE
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.51 V
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	300 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	200 °C
Minimum operating temperature	-50 °C
Maximum output current	12 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	45 V
Maximum reverse current	50 µA
surface mount	NO
technology	SCHOTTKY
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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SBH 1220TL ... SBH 1245TL

Axial lead diode

High temperature

Schottky barrier diodes

SBH 1220TL ... SBH 1245TL

Forward Current: 12 A

Reverse Voltage: 20 to 45 V

Preliminary Data

Absolute Maximum Ratings

Symbol Conditions

Values

Units

Features

Characteristics

Symbol Conditions

Mechanical Data

Values

Units

1)

Dimensions in mm

2)

3)

4)

5)

1

23-11-2010 MAM

SBH1245TL Related Products

	SBH1245TL	SBH1220TL	SBH1230TL	SBH1240TL
Description	High temperature schottky barrier diodes	High temperature schottky barrier diodes	High temperature schottky barrier diodes	High temperature schottky barrier diodes
package instruction	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Reach Compliance Code	compli	compli	compli	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	0.51 V	0.51 V	0.51 V	0.51 V
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Maximum non-repetitive peak forward current	300 A	300 A	300 A	300 A
Number of components	1	1	1	1
Phase	1	1	1	1
Number of terminals	2	2	2	2
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C
Minimum operating temperature	-50 °C	-50 °C	-50 °C	-50 °C
Maximum output current	12 A	12 A	12 A	12 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	45 V	20 V	30 V	40 V
Maximum reverse current	50 µA	50 µA	50 µA	50 µA
surface mount	NO	NO	NO	NO
technology	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY
Terminal form	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL

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