FRL130R4 datasheet, PDF - EEWORLD Datasheet

FRL130R4: DescriptionPower Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF; CategoryDiscrete semiconductor The transistor; File Size197KB，7 Pages; ManufacturerHarris; Websitehttp://www.harris.com/

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FRL130R4 Overview

Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Harris
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	RADIATION HARDENED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	8 A
Maximum drain current (ID)	8 A
Maximum drain-source on-resistance	0.18 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-205AF
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	25 W
Maximum power dissipation(Abs)	25 W
Maximum pulsed drain current (IDM)	24 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON
Maximum off time (toff)	345 ns
Maximum opening time (tons)	245 ns

	FRL130R4	2N7272
Description	Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF	Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
Is it Rohs certified?	incompatible	incompatible
Maker	Harris	Harris
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown	unknow
ECCN code	EAR99	EAR99
Other features	RADIATION HARDENED	RADIATION HARDENED
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V
Maximum drain current (Abs) (ID)	8 A	8 A
Maximum drain current (ID)	8 A	8 A
Maximum drain-source on-resistance	0.18 Ω	0.18 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-205AF	TO-205AF
JESD-30 code	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	25 W	25 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON

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