TS4B06GD2G datasheet, PDF - EEWORLD Datasheet

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TS4B06GD2G: DescriptionBridge Rectifier Diode, 1 Phase, 4A, 800V V(RRM), Silicon, GREEN, PLASTIC, TS4B, 4 PIN; CategoryDiscrete semiconductor diode; File Size212KB，4 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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TS4B06GD2G Overview

Bridge Rectifier Diode, 1 Phase, 4A, 800V V(RRM), Silicon, GREEN, PLASTIC, TS4B, 4 PIN

TS4B06GD2G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Taiwan Semiconductor
package instruction	R-PSFM-T4
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	UL RECOGNIZED
Minimum breakdown voltage	800 V
Shell connection	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PSFM-T4
JESD-609 code	e3
Maximum non-repetitive peak forward current	120 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	4 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	800 V
surface mount	NO
Terminal surface	MATTE TIN
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

TS4B06GD2G Preview

TS4B01G thru TS4B07G

Taiwan Semiconductor

CREAT BY ART

FEATURES

- Glass passivated junction

- Ideal for printed circuit board

- High case dielectric strength of 2000VRMS

- Reliable low cost construction

- UL Recognized File # E-326243

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

Glass Passivated Bridge Rectifiers

TS4B

MECHANICAL DATA

Case:

TS4B

Molding compound, UL flammability classification rating 94V-0

Base P/N with suffix "G" on packing code - halogen-free

Terminal:

Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test

Polarity:

Polarity as marked on the body

Mounting torque:

5 in-lbs maximum

Weight:

4 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

=25℃ unless otherwise noted)

PARAMETER

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

Rating for fusing (t<8.3ms)

Maximum instantaneous forward voltage (Note 1)

@2A

@4A

Maximum DC reverse current

at rated DC blocking voltage

Typical thermal resistance

Operating junction temperature range

Storage temperature range

Note 1: Pulse test with PW=300μs, 1% duty cycle

=25

℃

=125℃

SYMBOL

RRM

RMS

F(AV)

FSM

TS4B

01G

TS4B

02G

100

TS4B

03G

200

140

200

TS4B

04G

400

280

400

120

1.0

1.1

500

5.5

- 55 to +150

TS4B

05G

600

420

600

TS4B

06G

800

560

800

TS4B

07G

1000

700

1000

UNIT

θJC

STG

μA

C/W

Document Number: DS_D1311042

Version: F13

TS4B01G thru TS4B07G

Taiwan Semiconductor

ORDERING INFORMATION

PART NO.

PACKING CODE

Suffix "G"

GREEN COMPOUND

CODE

TS4B0xG

(Note 1)

TS4B

20 / TUBE

Forming

20 / TUBE

PACKAGE

PACKING

Note 1: "x" defines voltage from 50V (TS4B01G) to 1000V (TS4B07G)

EXAMPLE

PREFERRED P/N

TS4B01G C2

TS4B01G C2G

PART NO.

TS4B01G

PACKING CODE

Green compound

GREEN COMPOUND

CODE

DESCRIPTION

RATINGS AND CHARACTERISTICS CURVES

(TA=25℃ unless otherwise noted)

FIG.1- MAXIMUM FORWARD CURRENT

DERATING CURVE

100

150

CASE TEMPERATURE (

INSTANTANEOUS REVERSE CURRENT (μA)

FIG. 2- TYPICAL REVERSE CHARACTERISTICS

100

TJ=100℃

AVERAGE FORWARD

CURRENT (A)

TJ=25℃

0.1

100

120

140

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

FIG. 3- MAXIMUM NON-REPETITIVE FORWARD

SURGE CURRENT

175

PEAK FORWARD SURGE CURRENT (A)

150

125

100

NUMBER OF CYCLES AT 60 Hz

100

8.3ms Single Half Sine Wave

JEDEC Method

FIG. 4- TYPICAL FORWARD CHARACTERISTICS

INSTANTANEOUS FORWARD CURRENT (A)

0.1

0.6

0.7

0.8

0.9

1.1

1.2

1.3

INSTANTANEOUS FORWARD VOLTAGE (V)

Document Number: DS_D1311042

Version: F13

TS4B01G thru TS4B07G

Taiwan Semiconductor

FIG. 5- TYPICAL JUNCTION CAPACITANCE

1000

J UNCTION CAPACITANCE (pF)

900

800

700

600

500

400

300

200

100

0.1

100

1000

REVERSE VOLTAGE (V)

f=1.0MHz

Vsig=50mVp-p

PACKAGE OUTLINE DIMENSIONS

Unit (mm)

Min

24.70

0.90

1.80

14.70

3.96

17.00

7.30

3.30

3.10

9.30

1.52

0.55

Max

25.30

1.10

2.20

15.30

4.37

18.00

7.70

3.70

3.40

9.70

1.73

0.75

Unit (inch)

Min

0.972

0.035

0.071

0.579

0.156

0.669

0.287

0.130

0.122

0.366

0.060

0.022

Max

0.996

0.043

0.087

0.602

0.172

0.709

0.303

0.146

0.134

0.382

0.068

0.030

DIM.

MARKING DIAGRAM

P/N

YWW

= Specific Device Code

= Green Compound

= Date Code

= Factory Code

Document Number: DS_D1311042

Version: F13

TS4B01G thru TS4B07G

Taiwan Semiconductor

CREAT BY ART

Notice

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,

assumes no responsibility or liability for any errors inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied,to

any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of

sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,

relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,

merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or seling these products for use in such applications do so at their own risk and agree to fully

indemnify TSC for any damages resulting from such improper use or sale.

Document Number: DS_D1311042

Version: F13

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