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SKT7

Description
THYRISTOR
File Size78KB,3 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
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SKT7 Overview

THYRISTOR

SKT 7,0 Qu RG bond.
Absolute Maximum Ratings
Symbol
V
RRM
V
DRM
I
T(AV)
I
TSM
i
2
t
T
jmax
Conditions
T
j
= 25 °C, I
R
= 0.2 mA
T
j
= 25 °C, I
D
= 0.2 mA
T
c
= 80 °C, T
j
= 130 °C
T
j
= 130 °C, 10 ms, sin 180°
T
j
= 130 °C, 10 ms, sin 180°
Values
1600
1600
55
450
1010
130
Unit
V
V
A
A
A
2
s
°C
THYRISTOR
I
T(DC)
= 75 A
V
RRM
= 1600 V
Size: 7,0 mm x 7,0 mm
Corner gate
SKT 7,0 Qu RG bond.
Electrical Characteristics
Symbol
V
T
V
T(TO)
r
T
I
GT
V
GT
I
GD
V
GD
I
H
I
L
Conditions
T
j
= 130 °C, I
T
= 45 A
T
j
= 130 °C
T
j
= 130 °C
T
j
= 25 °C
T
j
= 25 °C
T
j
= 115 °C
T
j
= 130 °C
T
j
= 25 °C
T
j
= 25 °C
min.
typ.
max.
1.2
0.85
7.9
100
1.98
Unit
V
V
mΩ
mA
V
mA
V
6
0.25
165
330
Features
• high current density due to double
mesa technology
• high surge current
• compatible to thick wire bonding
• compatible to all standard solder
processes
mA
mA
Dynamic Characteristics
Symbol
t
q
(di/dt)
cr
(dv/dt)
cr
Conditions
T
j
= 130 °C
T
j
= 130 °C
T
j
= 130 °C
min.
typ.
150
max.
Unit
µs
Typical Applications*
• conrolled rectifier circuits
• solid state relays
50
1000
A/µs
V/µs
Thermal Characteristics
Symbol
T
j
T
stg
T
solder
R
th(j-c)
Semipack 1 assembly
0.45
Conditions
min.
-40
-40
typ.
max.
130
130
255
Unit
°C
°C
°C
K/W
Mechanical Characteristics
Symbol
Raster
size
Area total
Anode
Gate and
Cathode
Wire bond
Package
Chips /
Package
Conditions
Values
7.0 x 7.0
49
solderable (Ag/Ni)
bondable (Al)
Al,diameter
500µm
tray
81
Unit
mm
2
mm
2
pcs
SKT
© by SEMIKRON
Rev. 0 – 19.02.2010
1

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