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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP36N055HLE, NP36N055ILE, NP36N055SLE
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-Channel MOS Field Effect
Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP36N055HLE
NP36N055ILE
Note
PACKAGE
TO-251 (JEITA) / MP-3
TO-252 (JEITA) / MP-3Z
TO-252 (JEDEC) / MP-3ZK
FEATURES
•
Channel temperature 175 degree rated
•
Super low on-state resistance
R
DS(on)1
= 13 mΩ MAX. (V
GS
= 10 V, I
D
= 18 A)
R
DS(on)2
= 16 mΩ MAX. (V
GS
= 5 V, I
D
= 18 A)
•
Low C
iss
: C
iss
= 2900 pF TYP.
•
Built-in gate protection diode
NP36N055SLE
Note
Not for new design.
(TO-251)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
I
AS
E
AS
T
ch
T
stg
55
±20
±36
±144
1.2
120
36 / 33
12 / 108
175
–55 to + 175
V
V
A
A
W
W
A
mJ
°C
°C
(TO-252)
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Single Avalanche Current
Single Avalanche Energy
Channel Temperature
Storage Temperature
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
Note2
Note2
2.
Starting T
ch
= 25°C, R
G
= 25
Ω,
V
GS
= 20
→
0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A)
1.25
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No.
D14156EJ4V0DS00 (4th edition)
Date Published July 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
1999, 2005
Microchip MCU
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