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800-2

Description
3 PHASE, 40 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size467KB,7 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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800-2 Overview

3 PHASE, 40 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

800-2 Parametric

Parameter NameAttribute value
Number of terminals5
Number of components6
Maximum average input current40 A
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formUNSPECIFIED
terminal coatingTIN LEAD
Terminal locationUPPER
Packaging MaterialsUNSPECIFIED
structureBRIDGE, 6 ELEMENTS
Shell connectionISOLATED
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Phase3
Maximum repetitive peak reverse voltage100 V
Maximum non-repetitive peak forward current250 A
800(e3) and 801(e3) series
Available
Three Phase Ultrafast Bridge Rectifiers
DESCRIPTION
This series of high-current three-phase bridge rectifiers are constructed with hermetically
sealed rectifiers built with the same design and construction techniques used in military
applications for the upmost in reliability. These include voidless glass encapsulation and
internal "Category 1" metallurgical bonds. These 25 A & 40 A ultrafast rectifier bridges are
available with working peak reverse voltage ratings up to 150 V per leg.
(Actual appearance may vary)
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
Current ratings to 40 amps
V
RWM
from 50 to 150 volts (see
part nomenclature
for all options)
150 ºC junction temperature
Surge ratings to 250 amps
Recovery times to 25 ns
MIL-PRF-19500 similarity
RoHS compliant versions available
ME Package
APPLICATIONS / BENEFITS
Fused-in voidless glass diodes used in each leg
Electrically isolated aluminum heat sink case
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Case:
Thermal Resistance Junction-to-Ambient:
Forward Surge Current (Peak):
Maximum Average DC Output Current:
@ T
C
= 55 ºC
Maximum Average DC Output Current:
@ T
C
= 100 ºC
Solder Temperature @ 10 s
Symbol
T
J
and T
STG
R
ӨJC
R
ӨJA
I
FSM
I
O
I
O
Value
-65 to +150
1.5
3.0
20
250
125
40
25
20
16
260
Unit
ºC
ºC/W
ºC/W
A
A
A
o
800
801
800
801
800
801
800
801
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
C
RF01152, Rev A, (12/19/13)
©2013 Microsemi Corporation
Ph: 949-380-6100
sales.support@microsemi.com
Page 1 of 7
One Enterprise, Aliso Viejo, CA 92656

800-2 Related Products

800-2 800-1 800-3 800_07 801-2 801-4 800-4 801-1 801-3
Description 3 PHASE, 40 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 3 PHASE, 40 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 3 PHASE, 40 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 3 PHASE, 40 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 3 PHASE, 40 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 3 PHASE, 40 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 3 PHASE, 40 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 3 PHASE, 40 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 3 PHASE, 40 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
Number of terminals 5 5 5 5 5 5 5 5 5
Number of components 6 6 6 6 6 6 6 6 6
Maximum average input current 40 A 40 A 40 A 40 A 40 A 40 A 40 A 40 A 40 A
state ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package Size FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
terminal coating TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal location UPPER UPPER UPPER UPPER UPPER UPPER UPPER UPPER UPPER
Packaging Materials UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
structure BRIDGE, 6 ELEMENTS BRIDGE, 6 ELEMENTS BRIDGE, 6 ELEMENTS BRIDGE, 6 ELEMENTS BRIDGE, 6 ELEMENTS BRIDGE, 6 ELEMENTS BRIDGE, 6 ELEMENTS BRIDGE, 6 ELEMENTS BRIDGE, 6 ELEMENTS
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Phase 3 3 3 3 3 3 3 3 3
Maximum repetitive peak reverse voltage 100 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Maximum non-repetitive peak forward current 250 A 250 A 250 A 250 A 250 A 250 A 250 A 250 A 250 A
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