D3SB60 datasheet, PDF - EEWORLD Datasheet

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D3SB60: Description2.3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size485KB，3 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/; Environmental Compliance

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D3SB60 Overview

2.3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

D3SB60 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SECOS
Reach Compliance Code	compli
ECCN code	EAR99
Minimum breakdown voltage	600 V
Shell connection	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-30 code	R-PSFM-T4
Maximum non-repetitive peak forward current	150 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Maximum output current	2.3 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Maximum repetitive peak reverse voltage	600 V
Maximum reverse current	10 µA
Reverse test voltage	600 V
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE

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D3SB10 ~ D3SB100

Elektronische Bauelemente

100 V ~ 1000 V

4.0 Amp High Current Glass Passivated

Molding Single-Phase Bridge Rectifier

RoHS Compliant Product

A suffix of “-C” specifies halogen-free and RoHS Compliant

D3-4SB

FEATURES



Plastic Package has Underwriters

Laboratory Flammability Classification 94V-0

High current capacity with small package

Glass passivated chip junctions

Superior thermal conductivity

High IFSM

C

R

N

F

Q

P

L L L

REF.

A

B

C

D

E

G

J

F

Millimeter

Min.

Max.

24.7

25.3

14.7

15.3

4.58

4.62

17.0

18.0

0.50

0.90

4.50 REF.

3.50

3.90

9.3

9.7

REF.

K

L

N

P

Q

R

S

H

A

B

G

J

S

H

K

D

E

Millimeter

Min.

Max.

2.50

2.90

7.30

7.70

3 X 45°

0.90

1.10

1.50 REF.

3.00

3.40

0.8

1.2

3.0

4.0

MAXIMUM RATINGS (T

A

=25℃ unless otherwise noted)

PART NUMBERS

PARAMETERS

Maximum repetitive voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum DC reverse current at @T

A

=25°C

rated DC blocking voltage

@T

A

=125°C

With heatsink

Maximun average forward T

C

=100°C

rectified output current at Without heatsink

T

A

=40°C

Peak Forward Surge Current 8.3ms single half

sine-wave superimposed on rated load

Rating of fusing (t < 8.3ms)

Maximum Instantaneous

Forward Voltage @ 2.0A

Dielectric strength terminals to case, AC 1

minute Current 1mA

Maximum thermal on P.C.B without heat-sink

Resistance per leg on AI plate heat-sink

Operating and Storage Temperature Range

Mounting torque

http://www.SeCoSGmbH.com/

SYMBOL

V

RRM

V

RMS

V

DC

I

R

D3SB

10

100

70

100

D3SB

20

200

140

200

D3SB D3SB

40

60

400

600

280

400

10

500

4.0

420

600

D3SB

80

800

560

800

D3SB

100

1000

700

1000

UNITS

V



A

I

O

2.3

I

FSM

l2t

V

F

Vdia

R

θJA

R

θJC

T

J

, T

STG

Tor

150

93

1.1

2.5

26

4.2

150 , -55 ~ 150

Rating Torque：0.8

A

A2sec

V

KV

°C / W

°C

N.m

Any changes of specification will not be informed individually.

05-Aug-2010 Rev. A

Page 1 of 2

D3SB60 Related Products

	D3SB60	D3SB10	D3SB20	D3SB40	D3SB80	D3SB100
Description	2.3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE	2.3 A, SILICON, BRIDGE RECTIFIER DIODE	2.3 A, SILICON, BRIDGE RECTIFIER DIODE	2.3 A, SILICON, BRIDGE RECTIFIER DIODE	2.3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE	2.3 A, SILICON, BRIDGE RECTIFIER DIODE
Reach Compliance Code	compli	compliant	compliant	compli	compli	compliant
Is it Rohs certified?	conform to	conform to	conform to	-	-	conform to
Maker	SECOS	SECOS	SECOS	-	-	SECOS
Minimum breakdown voltage	600 V	100 V	200 V	-	-	1000 V
Shell connection	ISOLATED	ISOLATED	ISOLATED	-	-	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	-	-	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	-	-	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	-	-	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	1.1 V	1.1 V	-	-	1.1 V
JESD-30 code	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	-	-	R-PSFM-T4
Maximum non-repetitive peak forward current	150 A	150 A	150 A	-	-	150 A
Number of components	4	4	4	-	-	4
Phase	1	1	1	-	-	1
Number of terminals	4	4	4	-	-	4
Maximum operating temperature	150 °C	150 °C	150 °C	-	-	150 °C
Maximum output current	2.3 A	2.3 A	2.3 A	-	-	2.3 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	-	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	-	-	FLANGE MOUNT
Maximum repetitive peak reverse voltage	600 V	100 V	200 V	-	-	1000 V
Maximum reverse current	10 µA	10 µA	10 µA	-	-	10 µA
Reverse test voltage	600 V	100 V	200 V	-	-	1000 V
surface mount	NO	NO	NO	-	-	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	-	-	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	-	-	SINGLE
Base Number Matches	-	-	1	1	1	1

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