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D3SB80

Description
2.3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size485KB,3 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
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D3SB80 Overview

2.3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

D3SB80 Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
ECCN codeEAR99
Base Number Matches1
D3SB10 ~ D3SB100
Elektronische Bauelemente
100 V ~ 1000 V
4.0 Amp High Current Glass Passivated
Molding Single-Phase Bridge Rectifier
RoHS Compliant Product
A suffix of “-C” specifies halogen-free and RoHS Compliant
D3-4SB
FEATURES
Plastic Package has Underwriters
Laboratory Flammability Classification 94V-0
High current capacity with small package
Glass passivated chip junctions
Superior thermal conductivity
High IFSM
C
R
N
F
Q
P
L L L
REF.
A
B
C
D
E
G
J
F
Millimeter
Min.
Max.
24.7
25.3
14.7
15.3
4.58
4.62
17.0
18.0
0.50
0.90
4.50 REF.
3.50
3.90
9.3
9.7
REF.
K
L
N
P
Q
R
S
H
A
B
G
J
S
H
K
D
E
Millimeter
Min.
Max.
2.50
2.90
7.30
7.70
3 X 45°
0.90
1.10
1.50 REF.
3.00
3.40
0.8
1.2
3.0
4.0
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
PART NUMBERS
PARAMETERS
Maximum repetitive voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum DC reverse current at @T
A
=25°C
rated DC blocking voltage
@T
A
=125°C
With heatsink
Maximun average forward T
C
=100°C
rectified output current at Without heatsink
T
A
=40°C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load
Rating of fusing (t < 8.3ms)
Maximum Instantaneous
Forward Voltage @ 2.0A
Dielectric strength terminals to case, AC 1
minute Current 1mA
Maximum thermal on P.C.B without heat-sink
Resistance per leg on AI plate heat-sink
Operating and Storage Temperature Range
Mounting torque
http://www.SeCoSGmbH.com/
SYMBOL
V
RRM
V
RMS
V
DC
I
R
D3SB
10
100
70
100
D3SB
20
200
140
200
D3SB D3SB
40
60
400
600
280
400
10
500
4.0
420
600
D3SB
80
800
560
800
D3SB
100
1000
700
1000
UNITS
V
V
V
A
I
O
2.3
I
FSM
l2t
V
F
Vdia
R
θJA
R
θJC
T
J
, T
STG
Tor
150
93
1.1
2.5
26
4.2
150 , -55 ~ 150
Rating Torque:0.8
A
A
A2sec
V
KV
°C / W
°C
N.m
Any changes of specification will not be informed individually.
05-Aug-2010 Rev. A
Page 1 of 2

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D3SB80 D3SB10 D3SB20 D3SB60 D3SB40 D3SB100
Description 2.3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 2.3 A, SILICON, BRIDGE RECTIFIER DIODE 2.3 A, SILICON, BRIDGE RECTIFIER DIODE 2.3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 2.3 A, SILICON, BRIDGE RECTIFIER DIODE 2.3 A, SILICON, BRIDGE RECTIFIER DIODE
Reach Compliance Code compli compliant compliant compli compli compliant
Base Number Matches 1 - 1 - 1 1
Is it Rohs certified? - conform to conform to conform to - conform to
Maker - SECOS SECOS SECOS - SECOS
Minimum breakdown voltage - 100 V 200 V 600 V - 1000 V
Shell connection - ISOLATED ISOLATED ISOLATED - ISOLATED
Configuration - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS - BRIDGE, 4 ELEMENTS
Diode component materials - SILICON SILICON SILICON - SILICON
Diode type - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE - BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) - 1.1 V 1.1 V 1.1 V - 1.1 V
JESD-30 code - R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 - R-PSFM-T4
Maximum non-repetitive peak forward current - 150 A 150 A 150 A - 150 A
Number of components - 4 4 4 - 4
Phase - 1 1 1 - 1
Number of terminals - 4 4 4 - 4
Maximum operating temperature - 150 °C 150 °C 150 °C - 150 °C
Maximum output current - 2.3 A 2.3 A 2.3 A - 2.3 A
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR
Package form - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT
Maximum repetitive peak reverse voltage - 100 V 200 V 600 V - 1000 V
Maximum reverse current - 10 µA 10 µA 10 µA - 10 µA
Reverse test voltage - 100 V 200 V 600 V - 1000 V
surface mount - NO NO NO - NO
Terminal form - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE
Terminal location - SINGLE SINGLE SINGLE - SINGLE
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