EEWORLDEEWORLDEEWORLD

Part Number

Search

HER203G

Description
2 A, 200 V, SILICON, RECTIFIER DIODE, DO-15
CategoryDiscrete semiconductor    diode   
File Size146KB,3 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Parametric Compare View All

HER203G Online Shopping

Suppliers Part Number Price MOQ In stock  
HER203G - - View Buy Now

HER203G Overview

2 A, 200 V, SILICON, RECTIFIER DIODE, DO-15

HER203G Parametric

Parameter NameAttribute value
MakerSECOS
package instructionO-PALF-W2
Reach Compliance Codecompliant
Other featuresHIGH RELIABILITY
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeDO-15
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current60 A
Number of components1
Phase1
Number of terminals2
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage200 V
Maximum reverse current5 µA
Maximum reverse recovery time0.05 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
HER201G ~ HER207G
Elektronische Bauelemente
VOLTAGE 50 ~ 1000 V
2 A, Glass Passivated High Efficiency Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low forward voltage drop
High current capability
High reliability
High surge current capability
High speed switching
DO-15
C
A
B
PACKAGING INFORMATION
Glass Passivated
Case: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Axial leads, solderable per MIL-STD-202,
method 208 guaranteed
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 0.4300 grams (approximately)
D
A
REF.
A
B
C
D
Millimeter
Min.
Max.
25.4 (TYP)
5.80
7.62
2.60
3.60
-
0.90
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25°C ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PART NUMBERS
SYMBOL
HER
HER
HER
HER
HER
PARAMETERS
201
G
202
G
203
G
204
G
205
G
HER
206
G
HER
207
G
UNITS
TESTING
CONDITIONS
Recurrent Reverse Voltage (Max.)
RMS Voltage (Max.)
DC Blocking Voltage (Max.)
Instantaneous Forward Voltage
(Max.)
Average Forward
Rectified Current (Max.)
V
RRM
V
RMS
V
DC
V
F
I
O
50
35
50
100
70
100
1.00
200
140
200
400
280
400
1.30
2.0
600
420
600
800
560
800
1000
700
1000
1.85
V
V
V
V
A
I
F
= 2A
0.375” (9.5mm)
lead length
@ T
A
= 50°C
8.3ms single half
sine-wave
superimposed on
rated load
(JEDEC method)
Peak Forward Surge Current
I
FSM
60
5.0
150
50
30
-65 ~ 150
70
A
DC Reverse Current (Max.)
Reverse Recovery Time (Max.)
Junction Capacitance (Typ.)
Storage Temperature Range
I
R
T
RR
C
J
T
STG
μA
nS
pF
°C
V
R
= V
RRM
, T
A
=25°C
V
R
=V
RRM
, T
A
=100°C
I
F
=0.5A, I
R
=1.0A,
I
RR
=0.25A
f=1MHz and
applied 4V DC
reverse voltage
01-June-2008 Rev. B
Page 1 of 2

HER203G Related Products

HER203G HER201G HER202G HER204G HER205G HER206G HER207G
Description 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-15 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-15 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-15 2 A, 300 V, SILICON, RECTIFIER DIODE, DO-15 2 A, 400 V, SILICON, RECTIFIER DIODE, DO-15 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-15 2 A, 800 V, SILICON, RECTIFIER DIODE, DO-15
Maker SECOS SECOS SECOS SECOS SECOS SECOS SECOS
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Reach Compliance Code compliant compli compliant compli compli compli compli
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
application EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V 1.3 V 1.85 V 1.85 V 1.85 V
JEDEC-95 code DO-15 DO-15 DO-15 DO-15 DO-15 DO-15 DO-15
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 60 A 60 A 60 A 60 A 60 A 60 A 60 A
Number of components 1 1 1 1 1 1 1
Phase 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2
Maximum output current 2 A 2 A 2 A 2 A 2 A 2 A 2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 200 V 50 V 100 V 400 V 600 V 800 V 1000 V
Maximum reverse current 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA
Maximum reverse recovery time 0.05 µs 0.05 µs 0.05 µs 0.05 µs 0.07 µs 0.07 µs 0.07 µs
surface mount NO NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Base Number Matches 1 1 1 1 1 1 1
Is Samacsys - N - N N N N

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 873  16  433  2132  2321  18  1  9  43  47 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号