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200CNQ035

Description
100 A, 35 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size93KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
Download Datasheet Parametric View All

200CNQ035 Overview

100 A, 35 V, SILICON, RECTIFIER DIODE

200CNQ035 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresREVERSE ENERGY TESTED
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-XUFM-X2
Maximum non-repetitive peak forward current2000 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current100 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage35 V
surface mountNO
technologySCHOTTKY
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
CPT20130 - CPT20145
A
R
G
Baseplate
A=Common Anode
B
Q
N
W
Baseplate
Common Cathode
U
C
H
V
E
Baseplate
D=Doubler
Notes:
Baseplate: Nickel plated
copper
Schottky PowerMod
Dim. Inches
Min.
A
B
C
E
F
G
H
N
Q
R
U
V
W
Millimeters
Min.
Max.
Notes
Max.
F
U
3.630
---
0.800
0.700
0.630
---
0.130
0.120
0.510
0.490
1.375 BSC
---
0.010
---
---
0.290
0.275
3.150 BSC
---
0.600
0.340
0.312
0.195
0.180
---
92.20
20.32
17.78
---
16.00
3.30
3.05
12.95
12.45
34.92 BSC
0.25
---
---
---
7.37
6.99
80.01 BSC
15.24
---
8.64
7.92
4.95
4.57
1/4-28
Dia.
Dia.
Microsemi
Industry
Repetitive Peak
Working Peak
Catalog Number Part Number Reverse Voltage Reverse Voltage
CPT20130*
CPT20135*
30V
30V
MBR20030CT
35V
35V
200CNQ035
224CNQ035
MBR20035CT
CPT20140*
40V
40V
200CNQ040
224CNQ040
MBR20040CT
200CNQ045
CPT20145*
45V
45V
224CNQ045
MBR20045CT
*Add Suffix A for Common Anode, D for Doubler
Schottky Barrier Rectifier
Guard Ring Protection
200 Amperes/30 to 45 Volts
150° C Junction Temperature
Reverse Energy Tested
ROHS Compliant
Electrical Characteristics
I F(AV)
Average forward current per pkg
I F(AV)
Average forward current per leg
I FSM
Maximum surge current per leg
Maximum repetitive reverse current per leg I R(OV)
VFM
Max peak forward voltage per leg
VFM
Max peak forward voltage per leg
I RM
Max peak reverse current per leg
I RM
Max peak reverse current per leg
CJ
Typical junction capacitance
200 Amps
100 Amps
2000 Amps
2 Amps
0.68 Volts
0.64 Volts
1100mA
4.0mA
5500pF
TC = 99°C, Square wave, R 0JC = .20°C/W
TC = 99°C, Square wave, R 0JC = .40°C/W
8.3ms, half sine, T J = 125°C
f = 1 KHZ, 25°C
I FM = 200A: T J = 25°C*
I FM = 200A: T J = 125°C*
VRRM, T J = 125°C*
VRRM, T J = 25°C
VR = 5.0V, T C = 25°C
*Pulse test: Pulse width 300µsec, Duty cycle 2%
Thermal and Mechanical Characteristics
Storage temp range
Operating junction temp range
Max thermal resistance per leg
Typical thermal resistance (greased)
Terminal Torque
Mounting Base Torque (outside holes)
Mounting Base Torque (center hole)
center hole must be torqued first
Weight
T STG
TJ
R OJC
R OCS
-55°C to 150°C
-55°C to 150°C
0.40°C/W Junction to case
0.08°C/W Case to sink
35-40 inch pounds
30-40 inch pounds
8-10 inch pounds
2.8 ounces (75 grams) typical
www.microsemi.com
September, 2014 - Rev. 6

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