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FST8230SMD

Description
40 A, 30 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size122KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
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FST8230SMD Overview

40 A, 30 V, SILICON, RECTIFIER DIODE

FST8230SMD Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresREVERSE ENERGY TESTED
applicationGENERAL PURPOSE
Shell connectionANODE AND CATHODE
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PSIP-T3
Maximum non-repetitive peak forward current800 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current40 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
A1
K
N
2-PLCS.
E
L
M
3 PINS eq sp at .200
G
J
C
H
FST8230SM
A2
Schottky MiniMod
Dim. Inches
3
Millimeter
Minimum Maximum Minimum Maximum Notes
1
2
F
1
2
3
1
2
3
Common Cathode
SM3 & SM4
A3
1
2
3
A=Common Anode
3
SM1 & SM2
B
D
1
2
A1
A2
A3
B
C
D
E
F
G
H
J
K
L
M
N
1.490
1.020
.695
.110
.027
.100
.350
.015
.695
.088
.240
1.180
.230
.065
.151
1.510
1.040
.715
.120
.037
.110
.370
.025
.715
.098
.260
1.195
.250
.085
.161
37.85
26.12
17.65
2.79
0.69
2.54
8.89
0.38
17.65
2.24
6.10
29.97
5.84
1.65
3.84
38.35
26.42
18.16
3.04
0.94
2.79
9.40
0.64
18.16
2.49
6.60
30.35
6.35
2.16
4.09
B
D
SM5 & SM6
1
2
3
D=Doubler
TYP. PIN CONFIGURATION
FOR SM1, SM3, & SM5
TYP. PIN CONFIGURATION
FOR SM2, SM4, & SM6
Dia.
Note: Baseplate Common with Pin 2
Working
Peak Reverse
Voltage
2
30V
Repetitive
Peak Reverse
Voltage
30V
Schottky Barrier Rectifier
Guard Ring Protection
2X40 Amperes avg.
150°C Junction Temperature
FST8230SM 1
Reverse Energy Tested
Low Forward Voltage
NOTE: 1 SPECIFY (1-6) TO IDENTIFY PACKAGE DESIRED
2 SPECIFY C-COMMON CATHODE, A-COMMON ANODE, D-DOUBLER
ROHS Compliant
Microsemi
Catalog Number
Electrical Characteristics
I F(AV) 80 Amps
Average forward current per pkg
I F(AV) 40 Amps
Average forward current per leg
I FSM 800 Amps
Maximum surge current per leg
Max repetitive peak reverse current per leg I R(OV) 2 Amps
VFM 0.42 Volts
Max peak forward voltage per leg
VFM 0.47 Volts
Max peak forward voltage per leg
I RM 300 mA
Max peak reverse current per leg
I RM 5 mA
Max peak reverse current per leg
I RM 3 mA
Typical reverse current per leg
CJ 2400 pF
Typical junction capacitance per leg
T C = 115°C, Square wave, R0JC = 0.5°C/W
T C = 115°C, Square wave, R0JC = 1.0°C/W
8.3 ms, half sine, T J = 150°C
f = 1 KHZ, 25°C, 1µsec square wave
I FM = 40A: T J = 150°C*
I FM = 40A: T J = 25°C*
VRRM, T J = 125°C*
VRRM, T J = 25°C
VRRM, T J = 25°C
VR = 5.0V, T C = 25°C
*Pulse test: Pulse width 300µsec, Duty cycle 2%
Thermal and Mechanical Characteristics
Storage temp range
Operating junction temp range
Max thermal resistance per leg
Max thermal resistance per pkg
Typical thermal resistance (greased)
Weight
T STG
TJ
R 0JC
R 0JC
R 0CS
-55°C to 175°C
-55°C to 150°C
1.0°C/W
Junction to case
0.5°C/W
Junction to case
0.3°C/W
Case to sink
0.3 ounce (8.4 grams) typical
www.microsemi.com
January, 2010 - Rev. 5

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