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FST8230SM4

Description
80 A, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size122KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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FST8230SM4 Overview

80 A, SILICON, RECTIFIER DIODE

A1
K
N
2-PLCS.
E
L
M
3 PINS eq sp at .200
G
J
C
H
FST8230SM
A2
Schottky MiniMod
Dim. Inches
3
Millimeter
Minimum Maximum Minimum Maximum Notes
1
2
F
1
2
3
1
2
3
Common Cathode
SM3 & SM4
A3
1
2
3
A=Common Anode
3
SM1 & SM2
B
D
1
2
A1
A2
A3
B
C
D
E
F
G
H
J
K
L
M
N
1.490
1.020
.695
.110
.027
.100
.350
.015
.695
.088
.240
1.180
.230
.065
.151
1.510
1.040
.715
.120
.037
.110
.370
.025
.715
.098
.260
1.195
.250
.085
.161
37.85
26.12
17.65
2.79
0.69
2.54
8.89
0.38
17.65
2.24
6.10
29.97
5.84
1.65
3.84
38.35
26.42
18.16
3.04
0.94
2.79
9.40
0.64
18.16
2.49
6.60
30.35
6.35
2.16
4.09
B
D
SM5 & SM6
1
2
3
D=Doubler
TYP. PIN CONFIGURATION
FOR SM1, SM3, & SM5
TYP. PIN CONFIGURATION
FOR SM2, SM4, & SM6
Dia.
Note: Baseplate Common with Pin 2
Working
Peak Reverse
Voltage
2
30V
Repetitive
Peak Reverse
Voltage
30V
Schottky Barrier Rectifier
Guard Ring Protection
2X40 Amperes avg.
150°C Junction Temperature
FST8230SM 1
Reverse Energy Tested
Low Forward Voltage
NOTE: 1 SPECIFY (1-6) TO IDENTIFY PACKAGE DESIRED
2 SPECIFY C-COMMON CATHODE, A-COMMON ANODE, D-DOUBLER
ROHS Compliant
Microsemi
Catalog Number
Electrical Characteristics
I F(AV) 80 Amps
Average forward current per pkg
I F(AV) 40 Amps
Average forward current per leg
I FSM 800 Amps
Maximum surge current per leg
Max repetitive peak reverse current per leg I R(OV) 2 Amps
VFM 0.42 Volts
Max peak forward voltage per leg
VFM 0.47 Volts
Max peak forward voltage per leg
I RM 300 mA
Max peak reverse current per leg
I RM 5 mA
Max peak reverse current per leg
I RM 3 mA
Typical reverse current per leg
CJ 2400 pF
Typical junction capacitance per leg
T C = 115°C, Square wave, R0JC = 0.5°C/W
T C = 115°C, Square wave, R0JC = 1.0°C/W
8.3 ms, half sine, T J = 150°C
f = 1 KHZ, 25°C, 1µsec square wave
I FM = 40A: T J = 150°C*
I FM = 40A: T J = 25°C*
VRRM, T J = 125°C*
VRRM, T J = 25°C
VRRM, T J = 25°C
VR = 5.0V, T C = 25°C
*Pulse test: Pulse width 300µsec, Duty cycle 2%
Thermal and Mechanical Characteristics
Storage temp range
Operating junction temp range
Max thermal resistance per leg
Max thermal resistance per pkg
Typical thermal resistance (greased)
Weight
T STG
TJ
R 0JC
R 0JC
R 0CS
-55°C to 175°C
-55°C to 150°C
1.0°C/W
Junction to case
0.5°C/W
Junction to case
0.3°C/W
Case to sink
0.3 ounce (8.4 grams) typical
www.microsemi.com
January, 2010 - Rev. 5

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FST8230SM4 FST8230SM1 FST8230SM3 FST8230SM5 FST8230SMA FST8230SMD FST8230SM6 FST8230SM2 FST8230SMC FST8230SM_10
Description 80 A, SILICON, RECTIFIER DIODE 80 A, SILICON, RECTIFIER DIODE 80 A, SILICON, RECTIFIER DIODE 80 A, SILICON, RECTIFIER DIODE 40 A, 30 V, SILICON, RECTIFIER DIODE 40 A, 30 V, SILICON, RECTIFIER DIODE 80 A, SILICON, RECTIFIER DIODE 80 A, SILICON, RECTIFIER DIODE 80 A, SILICON, RECTIFIER DIODE 80 A, SILICON, RECTIFIER DIODE
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