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MRF8372

Description
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size166KB,5 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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MRF8372 Overview

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

MRF8372 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionSO-8
Contacts8
Reach Compliance Code_compli
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-based maximum capacity2.75 pF
Collector-emitter maximum voltage16 V
ConfigurationSingle
Minimum DC current gain (hFE)30
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G8
JESD-609 codee0
Number of components1
Number of terminals8
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)2.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MRF555
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
Specified @ 12.5 V, 470 MHz Characteristics
Output Power = 1.5 W
Minimum Gain = 11 dB
Efficiency 60% (Typ)
Cost Effective PowerMacro Package
Electroless Tin Plated Leads for Improved Solderability
Power Macro
Designed primarily for wideband large signal stages in
the UHF frequency range.
DESCRIPTION:
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25
°
C)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Value
16
30
3.0
500
Unit
Vdc
Vdc
Vdc
mA
Thermal Data
P
D
Total Device Dissipation @ TC = 75ºC
Derate above 75ºC
3.0
40
Watts
mW/ ºC
MSC1316.PDF 10-25-99

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