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BUK7608-40B,118

Description
N-channel TrenchMOS standard level FET
CategoryDiscrete semiconductor    The transistor   
File Size194KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BUK7608-40B,118 Overview

N-channel TrenchMOS standard level FET

BUK7608-40B,118 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
Parts packaging codeD2PAK
package instructionPLASTIC, D2PAK, 3 PIN
Contacts3
Manufacturer packaging codeSOT404
Reach Compliance Code_compli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)241 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain current (Abs) (ID)101 A
Maximum drain current (ID)101 A
Maximum drain-source on-resistance0.008 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)157 W
Maximum pulsed drain current (IDM)407 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
BUK7608-40B
N-channel TrenchMOS standard level FET
Rev. 04 — 24 September 2008
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
V
DS
I
D
P
tot
Quick reference
Conditions
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3;
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-
Typ
-
-
-
Max
40
75
157
Unit
V
A
W
drain-source voltage T
j
25 °C; T
j
175 °C
drain current
total power
dissipation
Symbol Parameter
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
Q
GD
gate-drain charge
V
GS
= 10 V; I
D
= 25 A;
V
DS
= 32 V; T
j
= 25 °C; see
Figure 14
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 12;
see
Figure 11
-
12
-
nC
I
D
= 75 A; V
sup
40 V;
R
GS
= 50
Ω;
V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
-
-
241
mJ
Static characteristics
R
DSon
drain-source
on-state resistance
-
6.6
8
mΩ
[1]
Continuous current is limited by package.

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