BF621,115 datasheet, PDF - EEWORLD Datasheet

BF621,115: DescriptionPNP high-voltage transistors; CategoryDiscrete semiconductor The transistor; File Size126KB，10 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BF621,115 Overview

PNP high-voltage transistors

Parameter Name	Attribute value
Brand Name	NXP Semiconduc
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	SOT-89
package instruction	PLASTIC, MPT3, SMD, UPAK-3
Contacts	3
Manufacturer packaging code	SOT89
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.05 A
Collector-based maximum capacity	1.6 pF
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JESD-30 code	R-PSSO-F3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	FLAT
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	60 MHz
VCEsat-Max	0.8 V

DISCRETE SEMICONDUCTORS

DATA SHEET

dbook, halfpage

M3D109

BF621; BF623

PNP high-voltage transistors

Product data sheet

Supersedes data of 1999 Apr 21

2004 Dec 14

	BF621,115	BF623,115
Description	PNP high-voltage transistors	PNP high-voltage transistors
Brand Name	NXP Semiconduc	NXP Semiconduc
Is it Rohs certified?	conform to	conform to
Maker	NXP	NXP
Parts packaging code	SOT-89	SOT-89
package instruction	PLASTIC, MPT3, SMD, UPAK-3	PLASTIC, MPT3, SMD, UPAK-3
Contacts	3	3
Manufacturer packaging code	SOT89	SOT89
Reach Compliance Code	compli	compli
ECCN code	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	0.05 A	0.05 A
Collector-based maximum capacity	1.6 pF	1.6 pF
Collector-emitter maximum voltage	300 V	250 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	50	50
JESD-30 code	R-PSSO-F3	R-PSSO-F3
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP
Maximum power dissipation(Abs)	1 W	1 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)
Terminal form	FLAT	FLAT
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	60 MHz	60 MHz
VCEsat-Max	0.8 V	0.8 V

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