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PDTC144EMB,315

Description
NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ
CategoryDiscrete semiconductor    The transistor   
File Size709KB,11 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

PDTC144EMB,315 Overview

NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ

PDTC144EMB,315 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeDFN
Contacts3
Manufacturer packaging codeSOT883B
Reach Compliance Codecompli
PDTC144EMB
83B
NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ
Rev. 1 — 11 June 2012
Product data sheet
1. Product profile
1.1 General description
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B
Surface-Mounted Device (SMD) plastic package.
PNP complement: PDTA144EMB.
SO
T8
1.2 Features and benefits
100 mA output current capability
Reduces component count
Built-in bias resistors
Reduces pick and place costs
Simplifies circuit design
AEC-Q101 qualified
Leadless ultra small SMD plastic
package
Low package height of 0.37 mm
1.3 Applications
Low-current peripheral driver
Control of IC inputs
Replaces general-purpose transistors
in digital applications
Mobile applications
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
O
R1
R2/R1
Quick reference data
Parameter
collector-emitter
voltage
output current
bias resistor 1 (input)
bias resistor ratio
T
amb
= 25 °C
Conditions
open base
Min
-
-
33
0.8
Typ
-
-
47
1
Max
50
100
61
1.2
Unit
V
mA
kΩ
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