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PDTA115TU,115

Description
PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = open
CategoryDiscrete semiconductor    The transistor   
File Size103KB,17 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

PDTA115TU,115 Overview

PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = open

PDTA115TU,115 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSC-70
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging codeSOT323
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
PDTA115T series
PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = open
Rev. 05 — 2 September 2009
Product data sheet
1. Product profile
1.1 General description
PNP resistor-equipped transistors.
Table 1.
Product overview
Package
NXP
PDTA115TE
PDTA115TK
PDTA115TM
PDTA115TS
[1]
PDTA115TT
PDTA115TU
[1]
Type number
NPN complement
JEITA
SC-75
SC-59
SC-101
SC-43A
-
SC-70
PDTC115TE
PDTC115TK
PDTC115TM
PDTC115TS
PDTC115TT
PDTC115TU
SOT416
SOT346
SOT883
SOT54 (TO-92)
SOT23
SOT323
Also available in SOT54A and SOT54 variant packages (see
Section 2)
1.2 Features
I
Built-in bias resistors
I
Simplifies circuit design
I
Reduces component count
I
Reduces pick and place costs
1.3 Applications
I
General purpose switching and
amplification
I
Inverter and interface circuits
I
Circuit drivers
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
O
R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
Conditions
open base
Min
-
-
70
Typ
-
-
100
Max
−50
−100
130
Unit
V
mA
kΩ

PDTA115TU,115 Related Products

PDTA115TU,115 PDTA115TM,315
Description PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = open PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = open
Brand Name NXP Semiconduc NXP Semiconduc
Is it Rohs certified? conform to conform to
Maker NXP NXP
Parts packaging code SC-70 DFN
package instruction SMALL OUTLINE, R-PDSO-G3 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN
Contacts 3 3
Manufacturer packaging code SOT323 SOT883
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Other features BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR
Maximum collector current (IC) 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 100 100
JESD-30 code R-PDSO-G3 R-PBCC-N3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE CHIP CARRIER
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.2 W 0.25 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING NO LEAD
Terminal location DUAL BOTTOM
Maximum time at peak reflow temperature 40 NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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