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2SK4085LS-1E

Description
Power Field-Effect Transistor
CategoryDiscrete semiconductor    The transistor   
File Size365KB,7 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SK4085LS-1E Overview

Power Field-Effect Transistor

2SK4085LS-1E Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
Ordering number : ENA0553E
2SK4085LS
SANYO Semiconductors
DATA SHEET
2SK4085LS
Features
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
ON-resistance RDS(on)=0.33
Ω
(typ.)
Input capacitance Ciss=1200pF (typ.)
10V drive
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *4
Avalanche Current *5
Symbol
VDSS
VGSS
IDc *1
IDpack *2
IDP
PD
Tch
Tstg
EAS
IAV
Limited only by maximum temperature Tch=150°C
Tc=25°C (SANYO
s ideal heat dissipation condition)*3
PW≤10μs, duty cycle≤1%
Tc=25°C (SANYO
s ideal heat dissipation condition)*3
Conditions
Ratings
500
±30
16
11
60
2.0
40
150
--55 to +150
141
16
Unit
V
V
A
A
A
W
W
°C
°C
mJ
A
*1
Shows chip capability.
*2
Package limited.
*3
SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4
VDD=50V, L=1mH, IAV=16A (Fig.1)
*5
L
1mH, Single pulse
Package Dimensions
unit : mm (typ)
7528-001
10.16
3.18
3.3
4.7
2.54
Product & Package Information
• Package
: TO-220F-3FS
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./magazine
2SK4085LS-1E
Marking
Electrical Connection
6.68
15.8
3.23
15.87
2
K4085
LOT No.
2.76
1.47 MAX
0.8
12.98
1
3
1
2
3
0.5
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220F-3FS
2.54
2.54
http://semicon.sanyo.com/en/network
62712 TKIM/40412 TC-00002743/O1007 TIIM TC-00000927/40407QB TIIM TC-00000628/22107QB TIIM TC-00000556 No. A0553-1/7
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