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PESD24VS1UL,315

Description
150 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size292KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

PESD24VS1UL,315 Overview

150 W, UNIDIRECTIONAL, SILICON, TVS DIODE

PESD24VS1UL,315 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeDFN
package instructionR-PBCC-N2
Contacts2
Manufacturer packaging codeSOD882
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW LEAKAGE CURRENT
Maximum breakdown voltage27.5 V
Minimum breakdown voltage26.5 V
Breakdown voltage nominal value27 V
Maximum clamping voltage70 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PBCC-N2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation150 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage24 V
surface mountYES
technologyAVALANCHE
Terminal surfaceTin (Sn)
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
PESDxS1UL series
Unidirectional ESD protection diodes
Rev. 3 — 25 October 2011
Product data sheet
1. Product profile
1.1 General description
Unidirectional ElectroStatic Discharge (ESD) protection diodes in a SOD882 leadless ultra
small Surface Mounted Device (SMD) plastic package designed to protect one signal line
from the damage caused by ESD and other transients.
1.2 Features and benefits
Ultra small SMD plastic package
ESD protection of one line
Max. peak pulse power: P
PP
= 150 W
Low clamping voltage: V
CL
= 20 V
AEC-Q101 qualified
Ultra low leakage current: I
RM
< 700 nA
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5; (surge); I
PP
up to 15 A
1.3 Applications
Computers and peripherals
Audio and video equipment
Parallel ports
Communication systems
High-speed data lines
1.4 Quick reference data
Table 1.
Symbol
V
RWM
Quick reference data
Parameter
reverse standoff voltage
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
C
d
diode capacitance
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
f = 1 MHz; V
R
= 0 V
-
-
-
-
-
207
152
38
32
23
300
200
75
70
50
pF
pF
pF
pF
pF
-
-
-
-
-
-
-
-
-
-
3.3
5.0
12
15
24
V
V
V
V
V
Conditions
Min
Typ
Max
Unit

PESD24VS1UL,315 Related Products

PESD24VS1UL,315 PESD5V0S1UL,315 PESD3V3S1UL,315 PESD15VS1UL,315 PESD12VS1UL,315
Description 150 W, UNIDIRECTIONAL, SILICON, TVS DIODE 150 W, UNIDIRECTIONAL, SILICON, TVS DIODE 150 W, UNIDIRECTIONAL, SILICON, TVS DIODE 150 W, UNIDIRECTIONAL, SILICON, TVS DIODE 150 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Brand Name NXP Semiconduc NXP Semiconduc NXP Semiconduc NXP Semiconduc NXP Semiconduc
Is it Rohs certified? conform to conform to conform to conform to conform to
Parts packaging code DFN DFN DFN DFN DFN
package instruction R-PBCC-N2 R-PBCC-N2 R-PBCC-N2 R-PBCC-N2 R-PBCC-N2
Contacts 2 2 2 2 2
Manufacturer packaging code SOD882 SOD882 SOD882 SOD882 SOD882
Reach Compliance Code compli compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Other features LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT
Maximum breakdown voltage 27.5 V 7.2 V 6 V 18.4 V 15.3 V
Minimum breakdown voltage 26.5 V 6.4 V 5.2 V 17.6 V 14.7 V
Breakdown voltage nominal value 27 V 6.8 V 5.6 V 18 V 15 V
Maximum clamping voltage 70 V 20 V 20 V 40 V 35 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code R-PBCC-N2 R-PBCC-N2 R-PBCC-N2 R-PBCC-N2 R-PBCC-N2
JESD-609 code e3 e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1 1
Maximum non-repetitive peak reverse power dissipation 150 W 150 W 150 W 150 W 150 W
Number of components 1 1 1 1 1
Number of terminals 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER
Peak Reflow Temperature (Celsius) 260 260 260 260 260
polarity UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 24 V 5 V 3.3 V 15 V 12 V
surface mount YES YES YES YES YES
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature 40 40 40 40 40
Maker NXP NXP - NXP NXP
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