PESDxS1UL series
Unidirectional ESD protection diodes
Rev. 3 — 25 October 2011
Product data sheet
1. Product profile
1.1 General description
Unidirectional ElectroStatic Discharge (ESD) protection diodes in a SOD882 leadless ultra
small Surface Mounted Device (SMD) plastic package designed to protect one signal line
from the damage caused by ESD and other transients.
1.2 Features and benefits
Ultra small SMD plastic package
ESD protection of one line
Max. peak pulse power: P
PP
= 150 W
Low clamping voltage: V
CL
= 20 V
AEC-Q101 qualified
Ultra low leakage current: I
RM
< 700 nA
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5; (surge); I
PP
up to 15 A
1.3 Applications
Computers and peripherals
Audio and video equipment
Parallel ports
Communication systems
High-speed data lines
1.4 Quick reference data
Table 1.
Symbol
V
RWM
Quick reference data
Parameter
reverse standoff voltage
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
C
d
diode capacitance
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
f = 1 MHz; V
R
= 0 V
-
-
-
-
-
207
152
38
32
23
300
200
75
70
50
pF
pF
pF
pF
pF
-
-
-
-
-
-
-
-
-
-
3.3
5.0
12
15
24
V
V
V
V
V
Conditions
Min
Typ
Max
Unit
NXP Semiconductors
PESDxS1UL series
Unidirectional ESD protection diodes
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Graphic symbol
1
2
sym035
1
2
Transparent
top view
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
-
Description
Version
leadless ultra small plastic package; 2 terminals; SOD882
body 1.0
0.6
0.5 mm
Type number
4. Marking
Table 4.
Marking codes
Marking code
G1
G2
G3
G4
G5
Type number
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
PESDXS1UL_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 25 October 2011
2 of 15
NXP Semiconductors
PESDxS1UL series
Unidirectional ESD protection diodes
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
PP
I
PP
Parameter
peak pulse power
peak pulse current
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
T
j
T
amb
T
stg
[1]
Conditions
t
p
= 8/20
s
t
p
= 8/20
s
[1]
[1]
Min
-
-
-
-
-
-
-
65
65
Max
150
15
15
5
5
3
150
+150
+150
Unit
W
A
A
A
A
A
C
C
C
junction temperature
ambient temperature
storage temperature
Non-repetitive current pulse 8/20
s
exponential decay waveform according to IEC 61000-4-5.
Table 6.
Symbol
V
ESD
ESD maximum ratings
Parameter
electrostatic discharge voltage
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
PESDxS1UL series
MIL-STD-883
(human body model)
Conditions
IEC 61000-4-2
(contact discharge)
[1]
Min
Max
Unit
-
-
-
-
-
-
30
30
30
30
23
10
kV
kV
kV
kV
kV
kV
[1]
Device stressed with ten non-repetitive ESD pulses.
Table 7.
Standard
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 8 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3B (human body model)
PESDXS1UL_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 25 October 2011
3 of 15
NXP Semiconductors
PESDxS1UL series
Unidirectional ESD protection diodes
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
μs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
μs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (μs)
40
30 ns
60 ns
t
0
Fig 1.
8/20
s
pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
6. Characteristics
Table 8.
Characteristics
T
amb
= 25
C unless otherwise specified
Symbol
V
RWM
Parameter
reverse standoff voltage
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
I
RM
reverse leakage current
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
V
BR
breakdown voltage
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
V
RWM
= 3.3 V
V
RWM
= 5.0 V
V
RWM
= 12 V
V
RWM
= 15 V
V
RWM
= 24 V
I
R
= 5 mA
[1]
Conditions
Min
-
-
-
-
-
-
-
-
-
-
5.2
6.4
14.7
17.6
26.5
Typ
-
-
-
-
-
0.7
0.1
<1
<1
<1
5.6
6.8
15.0
18.0
27.0
Max
3.3
5.0
12
15
24
2
1
50
50
50
6.0
7.2
15.3
18.4
27.5
Unit
V
V
V
V
V
A
A
nA
nA
nA
V
V
V
V
V
PESDXS1UL_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 25 October 2011
4 of 15
NXP Semiconductors
PESDxS1UL series
Unidirectional ESD protection diodes
Table 8.
Characteristics
…continued
T
amb
= 25
C unless otherwise specified
Symbol
C
d
Parameter
diode capacitance
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
V
CL
clamping voltage
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
r
dif
differential resistance
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
[1]
[2]
[2]
Conditions
f = 1 MHz; V
R
= 0 V
Min
-
-
-
-
-
Typ
207
152
38
32
23
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
300
200
75
70
50
8
20
9
20
19
35
23
40
36
70
400
80
200
225
300
Unit
pF
pF
pF
pF
pF
V
V
V
V
V
V
V
V
V
V
I
PP
= 1 A
I
PP
= 15 A
I
PP
= 1 A
I
PP
= 15 A
I
PP
= 1 A
I
PP
= 5 A
I
PP
= 1 A
I
PP
= 5 A
I
PP
= 1 A
I
PP
= 3 A
I
R
= 1 mA
I
R
= 1 mA
I
R
= 1 mA
I
R
= 1 mA
I
R
= 0.5 mA
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Pulse test: t
p
300
s;
duty cycle
0.02.
Non-repetitive current pulse 8/20
s
exponential decay waveform according to IEC 61000-4-5.
PESDXS1UL_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 25 October 2011
5 of 15
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