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2SD1932

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size231KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

2SD1932 Overview

Transistor

2SD1932 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
2SD1932
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 80V(Min)
·High
DC Current Gain-
: h
FE
=
1000(Min)@ (V
CE
= 3V, I
C
= 2A)
APPLICATIONS
·Designed
for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
80
V
80
V
7
V
4
A
6
A
2
W
35
I
C
Collector Current-Continuous
I
CM
Collector Current-Peak
Collector Power Dissipation
@T
a
=25℃
P
C
Collector Power Dissipation
@T
C
=25℃
T
J
Junction Temperature
150
T
stg
Storage Temperature
-55~150
isc Website:www.iscsemi.cn
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