Ordering number : ENA0188
2SB817C / 2SD1047C
2SB817C / 2SD1047C
Features
•
•
•
PNP Epitaxial Planar Silicon Transistor
NPN Triple Diffused Planar Silicon Transistor
140V / 12A, AF 80W Output Applications
Large current capacitance.
Wide ASO and high durability against breakdown.
Adoption of MBIT process.
Specifications
( ) : 2SB817C
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
(--)160
(--)140
(--)6
(--)12
(--)20
2.5
120
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Base-to-Emitterr Voltage
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
VBE
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Conditions
VCB=(--)160V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)5V, IC=(--)1A
VCE=(--)5V, IC=(--)5A
VCE=(--)5V, IC=(--)1A
VCB=(--)10V, f=1MHz
VCE=(--)5V, IC=(--)5A
IC=(--)5A, IB=(--)0.5A
IC=(--)5mA, IE=0A
IC=(--)50mA, RBE=∞
IE=(--)5mA, IC=0A
(--)160
(--)140
(--)6
100
35
(10)15
(280)140
1.5
(-
-0.3)0.2
(--)2.0
MHz
pF
V
V
V
V
V
Ratings
min
typ
max
(--)0.1
(--)0.1
200
Unit
mA
mA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13106DA MS IM TB-00001810 No. A0188-1/4
2SB817C / 2SD1047C
Continued from preceding page.
Parameter
Turn-On Time
Storage Time
Fall Time
Symbol
ton
tstg
tf
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min
typ
(0.45)0.56
(1.75)3.3
(0.25)0.4
max
Unit
µs
µs
µs
Package Dimensions
unit : mm
7503-003
15.6
14.0
4.8
3.2
2.0
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
IB1
OUTPUT
IB2
VR
50Ω
RB
2.6
3.5
RL=
10Ω
+
+
470µF
VCC=50V
1.3
15.0
20.0
1.2
100µF
VBE= --2V
1.6
2.0
20.0
1.0
0.6
IC=10IB1= --10IB2=5A
For PNP, the polarity is reversed.
1
2 3
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
5.45
5.45
1.4
--16
--14
IC -- VCE
2SB817C
20
18
IC -- VCE
2SD1047C
Collector Current, IC -- A
Collector Current, IC -- A
--12
--10
--8
--6
--4
--2
0
0
--1
--2
--3
--4
--5
--6
--7
--8
--500mA
--400mA
--300mA
500mA
400mA
16
14
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
300mA
200mA
--200mA
100mA
--100mA
--40mA
--20mA
IB=0mA
--9
--10
40mA
20mA
IB=0mA
9
10
Collector-to-Emitter Voltage, VCE -- V
--8
--7
IT03410
8
7
IC -- VBE
Collector-to-Emitter Voltage, VCE -- V
IT03411
IC -- VBE
2SB817C
VCE= --5V
2SD1047C
VCE=5V
Collector Current, IC -- A
--6
--5
Collector Current, IC -- A
6
5
4
3
2
1
0
0
°
25
°
C
--40
C
°
C
--4
--3
--2
--1
0
0
--0.5
12
20
°
C
Ta=
1
25
°
C
Ta
=
--1.0
--1.5
IT03412
0
0.2
0.4
0.6
--40
°
C
1.0
0.8
1.2
IT03413
Base-to-Emitter Voltage, VBE -- V
Base-to-Emitter Voltage, VBE -- V
No. A0188-2/4
2SB817C / 2SD1047C
3
2
hFE -- IC
Ta=120
°C
25
°
C
2SB817C
VCE= --5V
DC Current Gain, hFE
3
2
hFE -- IC
Ta=120
°
C
2SD1047C
VCE=5V
DC Current Gain, hFE
100
7
5
--40
°
C
25°C
100
7
5
--40
°
C
3
2
3
2
10
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
2
5 7 --10
IT03414
10
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
VCE(sat) -- IC
Collector Current, IC -- A
1.0
7
5 7 10
IT03415
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
--1.0
7
5
3
2
--0.1
7
5
3
2
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2SB817C
IC / IB=10
5
3
2
2SD1047C
IC / IB=10
0.1
7
5
3
2
1
Ta=
C
25
°
2
3
5 7 --0.1
2
3
2
0
°
C
0
°
C
--4
0
12
a=
T
--40
°
C
°
C
25
°
C
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
IT03417
--0.01
--0.01
5 7 --1.0
2
3
Collector Current, IC -- A
5
3
2
5 7 --10
IT03416
0.01
0.01
ASO
Collector Current, IC -- A
3.0
PC -- Ta
ICP=20A
IC=12A
2SB817C / 2SD1047C
Collector Dissipation, PC -- W
2SB817C / 2SD1047C
Collector Current, IC -- A
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
1m
s
10
10m
0m
s
PC
s
=1
20W
DC
n
tio
era
op
2.5
2.0
No
1.5
he
at
s
ink
1.0
0.01
1.0
Tc=25°C
Single pulse
(For PNP, minus sign is omitted.)
2
3
5
7
10
2
3
5
7 100
2
3
0.5
0
0
20
40
60
80
100
120
140
160
IT10415
Collector-to-Emitter Voltage, VCE -- V
140
Ambient Temperature, Ta --
°C
IT03419
PC -- Tc
2SB817C / 2SD1047C
120
Collector Dissipation, PC -- W
100
80
60
40
20
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc --
°C
IT10416
No. A0188-3/4
2SB817C / 2SD1047C
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0188-4/4
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