MBM29F040C-70PFTR-E1 datasheet, PDF

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MBM29F040C-70PFTR-E1: DescriptionFlash, 512KX8, 70ns, PDSO32, PLASTIC, REVERSE, TSOP1-32; Categorystorage storage; File Size302KB，41 Pages; ManufacturerSPANSION; Websitehttp://www.spansion.com/; Environmental Compliance

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MBM29F040C-70PFTR-E1 Overview

Flash, 512KX8, 70ns, PDSO32, PLASTIC, REVERSE, TSOP1-32

MBM29F040C-70PFTR-E1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	TSOP1
package instruction	PLASTIC, REVERSE, TSOP1-32
Contacts	32
Reach Compliance Code	compli
ECCN code	EAR99
Maximum access time	70 ns
JESD-30 code	R-PDSO-G32
JESD-609 code	e3
length	18.4 mm
memory density	4194304 bi
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Programming voltage	5 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40
type	NOR TYPE
width	8 mm
Base Number Matches	1

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SPANSION Flash Memory

Data Sheet

September 2003

This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and

Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

these products will be offered to customers of both AMD and Fujitsu.

Continuity of Specifications

There is no change to this datasheet as a result of offering the device as a SPANSION

revisions will occur when appropriate, and changes will be noted in a revision summary.

product. Future routine

Continuity of Ordering Part Numbers

AMD and Fujitsu continue to support existing part numbers beginning with "Am" and "MBM". To order these

products, please use only the Ordering Part Numbers listed in this document.

For More Information

Please contact your local AMD or Fujitsu sales office for additional information about SPANSION

solutions.

memory

MBM29F040C

-55/-70/-90

GENERAL DESCRIPTION

The MBM29F040C is a 4M-bit, 5.0 V-only Flash memory organized as 512K bytes of 8 bits each. The

MBM29F040C is offered in a 32-pin PLCC and 32-pin TSOP(I) package. This device is designed to be

programmed in-system with the standard system 5.0 V V

supply. A 12.0 V V

is not required for write or erase

operations. The device can also be reprogrammed in standard EPROM programmers.

The standard MBM29F040C offers access times 55 ns and 90 ns, allowing operation of high-speed

microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write

enable (WE), and output enable (OE) controls.

The MBM29F040C is pin and command set compatible with JEDEC standard E

PROMs. Commands are written

to the command register using standard microprocessor write timings. Register contents serve as input to an

internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch

addresses and data needed for the programming and erase operations. Reading data out of the device is similar

to reading from 12.0 V Flash or EPROM devices.

The MBM29F040C is programmed by executing the program command sequence. This will invoke the Embedded

Program Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies

proper cell margin. Typically, each sector can be programmed and verified in less than 0.5 seconds. Erase is

accomplished by executing the erase command sequence. This will invoke the Embedded Erase Algorithm which

is an internal algorithm that automatically preprograms the array if it is not already programmed before executing

the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell

margin.

Any individual sector is typically erased and verified in 1 second. (If already completely preprogrammed.)

The device also features a sector erase architecture. The sector mode allows for 64K byte sectors of memory

to be erased and reprogrammed without affecting other sectors. The MBM29F040C is erased when shipped

from the factory.

The device features single 5.0 V power supply operation for both read and write functions. Internally generated

and regulated voltages are provided for the program and erase operations. A low V

detector automatically

inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ

or by the Toggle Bit feature on DQ

. Once the end of a program or erase cycle has been completed, the device

internally resets to the read mode.

Fujitsu's Flash technology combines years of EPROM and E

PROM experience to produce the highest levels

of quality, reliability and cost effectiveness. The MBM29F040C memory electrically erases the entire chip or all

bits within a sector simultaneously via Fowler-Nordheim tunneling. The bytes are programmed one byte at a

time using the EPROM programming mechanism of hot electron injection.

MBM29F040C-70PFTR-E1 Related Products

	MBM29F040C-70PFTR-E1	MBM29F040C-55PFTR-E1	MBM29F040C-55PFTN-E1	MBM29F040C-55PD-E1	MBM29F040C-70PFTN-E1	MBM29F040C-70PD-E1	MBM29F040C-90PFTR-E1	MBM29F040C-90PFTN-E1	MBM29F040C-90PD-E1
Description	Flash, 512KX8, 70ns, PDSO32, PLASTIC, REVERSE, TSOP1-32	Flash, 512KX8, 55ns, PDSO32, PLASTIC, REVERSE, TSOP1-32	Flash, 512KX8, 55ns, PDSO32, PLASTIC, TSOP1-32	Flash, 512KX8, 55ns, PQCC32, PLASTIC, LCC-32	Flash, 512KX8, 70ns, PDSO32, PLASTIC, TSOP1-32	Flash, 512KX8, 70ns, PQCC32, PLASTIC, LCC-32	Flash, 512KX8, 90ns, PDSO32, PLASTIC, REVERSE, TSOP1-32	Flash, 512KX8, 90ns, PDSO32, PLASTIC, TSOP1-32	Flash, 512KX8, 90ns, PQCC32, PLASTIC, LCC-32
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Parts packaging code	TSOP1	TSOP1	TSOP1	QFJ	TSOP1	QFJ	TSOP1	TSOP1	QFJ
package instruction	PLASTIC, REVERSE, TSOP1-32	PLASTIC, REVERSE, TSOP1-32	PLASTIC, TSOP1-32	PLASTIC, LCC-32	PLASTIC, TSOP1-32	PLASTIC, LCC-32	PLASTIC, REVERSE, TSOP1-32	PLASTIC, TSOP1-32	PLASTIC, LCC-32
Contacts	32	32	32	32	32	32	32	32	32
Reach Compliance Code	compli	compli	compli	compli	compli	compli	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum access time	70 ns	55 ns	55 ns	55 ns	70 ns	70 ns	90 ns	90 ns	90 ns
JESD-30 code	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PQCC-J32	R-PDSO-G32	R-PQCC-J32	R-PDSO-G32	R-PDSO-G32	R-PQCC-J32
JESD-609 code	e3	e3	e3	e3	e3	e3	e3	e3	e3
length	18.4 mm	18.4 mm	18.4 mm	13.97 mm	18.4 mm	13.97 mm	18.4 mm	18.4 mm	13.97 mm
memory density	4194304 bi	4194304 bi	4194304 bi	4194304 bi	4194304 bi	4194304 bi	4194304 bi	4194304 bi	4194304 bi
Memory IC Type	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH
memory width	8	8	8	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1	1	1	1
Number of terminals	32	32	32	32	32	32	32	32	32
word count	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words
character code	512000	512000	512000	512000	512000	512000	512000	512000	512000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
organize	512KX8	512KX8	512KX8	512KX8	512KX8	512KX8	512KX8	512KX8	512KX8
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSSOP	TSSOP	TSSOP	QCCJ	TSSOP	QCCJ	TSSOP	TSSOP	QCCJ
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	CHIP CARRIER	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	CHIP CARRIER	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	CHIP CARRIER
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260	260	260	260
Programming voltage	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	3.56 mm	1.2 mm	3.56 mm	1.2 mm	1.2 mm	3.56 mm
Maximum supply voltage (Vsup)	5.5 V	5.25 V	5.25 V	5.25 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.75 V	4.75 V	4.75 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN
Terminal form	GULL WING	GULL WING	GULL WING	J BEND	GULL WING	J BEND	GULL WING	GULL WING	J BEND
Terminal pitch	0.5 mm	0.5 mm	0.5 mm	1.27 mm	0.5 mm	1.27 mm	0.5 mm	0.5 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	QUAD	DUAL	QUAD	DUAL	DUAL	QUAD
Maximum time at peak reflow temperature	40	40	40	40	40	40	40	40	40
type	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE
width	8 mm	8 mm	8 mm	11.43 mm	8 mm	11.43 mm	8 mm	8 mm	11.43 mm
Base Number Matches	1	1	1	1	1	1	1	1	1

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