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HY62UF16101CSLF-I-70

Description
Standard SRAM, 64KX16, 70ns, CMOS, PBGA48, FBGA-48
Categorystorage    storage   
File Size163KB,9 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
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HY62UF16101CSLF-I-70 Overview

Standard SRAM, 64KX16, 70ns, CMOS, PBGA48, FBGA-48

HY62UF16101CSLF-I-70 Parametric

Parameter NameAttribute value
MakerSK Hynix
Parts packaging codeBGA
package instructionTFBGA,
Contacts48
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time70 ns
JESD-30 codeR-PBGA-B48
JESD-609 codee1
length6.3 mm
memory density1048576 bit
Memory IC TypeSTANDARD SRAM
memory width16
Number of functions1
Number of terminals48
word count65536 words
character code64000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize64KX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height1.1 mm
Maximum supply voltage (Vsup)3.3 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
width6.2 mm
HY62UF16101C Series
64Kx16bit full CMOS SRAM
PRELIMINARY
DESCRIPTION
The HY62UF16101C is a high speed, super low
power and 1M bit full CMOS SRAM organized as
65,536 words by 16bit. The HY62UF16101C uses
high performance full CMOS process technology
and designed for high speed low power circuit
technology. It is particularly well suited for used in
high density low power system application. This
device has a data retention mode that guarantees
data to remain valid at a minimum power supply
voltage of 1.2V.
FEATURES
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Battery backup(LL/SL-part)
-. 1.2V(min) data retention
Standard pin configuration
-. 44 – TSOP II - 400mil
-. 48 - FBGA
Product
Voltage
Speed
No.
(V)
(ns)
HY62UF16101C
2.7~3.3 55/70/85
HY62UF16101C-I
2.7~3.3 55/70/85
Note 1. Blank : Commercial, I : Industrial
2. Current value is max.
Operation
Current/Icc(mA)
3
3
Standby Current(uA)
LL
SL
5
1
5
1
Temperature
(°C)
0~70
-40~85(I)
PIN CONNECTION
/LB
/OE A0
A1
A4
A6
A7
NC
A2
NC
A1~A7
A4
A3
A2
A1
A0
/CS
I/O1
I/O2
I/O3
I/O4
Vcc
GND
I/O5
I/O6
I/O7
I/O8
/WE
A15
A14
A13
A12
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
/OE
/UB
/LB
I/O16
I/O15
I/O14
I/O13
GND
Vcc
I/O12
I/O11
I/O10
I/O9
NC
A8
A9
A10
A11
NC
BLOCK DIAGRAM
ADD INPUT
BUFFER
ROW
DECODER
I/O1
SENSE AMP
IO9 /UB A3
IO10 IO11 A5
Vss IO12 NC
Vcc IO13 NC
/CS IO1
IO2 IO3
IO4 Vcc
IO5 Vss
A14
A15
A8
A9
A10
A11
A12
A13
A0
/CS
/OE
/LB
/UB
/WE
DECODER
I/O8
BUFFER
ADD INPUT
BUFFER
PRE DECODER
MEMORY
ARRAY
64K x 16
WRITE DRIVER
I/O9
BLOCK
DECODER
IO15 IO14 A14 A15 IO6 IO7
IO16 NC
NC
A8
A12 A13 /WE IO8
A9
A10 A11 NC
ADD INPUT
BUFFER
I/O16
FBGA
TSOP¥
±
PIN DESCRIPTION
Pin Name
/CS
/WE
/OE
/LB
/UB
Pin Function
Chip Select
Write Enable
Output Enable
Low Byte Control(I/O1~I/O8)
Upper Byte Control(I/O9~I/O16)
Pin Name
I/O1~I/O16
A0~A15
Vcc
Vss
NC
Pin Function
Data Inputs / Outputs
Address Inputs
Power(2.7V~3.3V)
Ground
No Connection
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.02 /Jun. 00
Hyundai Semiconductor

HY62UF16101CSLF-I-70 Related Products

HY62UF16101CSLF-I-70 HY62UF16101CSLF-I-55 HY62UF16101CSLF-I-85 HY62UF16101CLLF-I-70 HY62UF16101CLLF-I-55 HY62UF16101CLLF-I-85
Description Standard SRAM, 64KX16, 70ns, CMOS, PBGA48, FBGA-48 Standard SRAM, 64KX16, 55ns, CMOS, PBGA48, FBGA-48 Standard SRAM, 64KX16, 85ns, CMOS, PBGA48, FBGA-48 Standard SRAM, 64KX16, 70ns, CMOS, PBGA48, FBGA-48 Standard SRAM, 64KX16, 55ns, CMOS, PBGA48, FBGA-48 Standard SRAM, 64KX16, 85ns, CMOS, PBGA48, FBGA-48
Parts packaging code BGA BGA BGA BGA BGA BGA
package instruction TFBGA, TFBGA, TFBGA, TFBGA, TFBGA, TFBGA,
Contacts 48 48 48 48 48 48
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum access time 70 ns 55 ns 85 ns 70 ns 55 ns 85 ns
JESD-30 code R-PBGA-B48 R-PBGA-B48 R-PBGA-B48 R-PBGA-B48 R-PBGA-B48 R-PBGA-B48
JESD-609 code e1 e1 e1 e1 e1 e1
length 6.3 mm 6.3 mm 6.3 mm 6.3 mm 6.3 mm 6.3 mm
memory density 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 16 16 16 16 16 16
Number of functions 1 1 1 1 1 1
Number of terminals 48 48 48 48 48 48
word count 65536 words 65536 words 65536 words 65536 words 65536 words 65536 words
character code 64000 64000 64000 64000 64000 64000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
organize 64KX16 64KX16 64KX16 64KX16 64KX16 64KX16
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TFBGA TFBGA TFBGA TFBGA TFBGA TFBGA
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.1 mm 1.1 mm 1.1 mm 1.1 mm 1.1 mm 1.1 mm
Maximum supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
Minimum supply voltage (Vsup) 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
Nominal supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V
surface mount YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal surface TIN SILVER COPPER TIN SILVER COPPER TIN SILVER COPPER TIN SILVER COPPER TIN SILVER COPPER TIN SILVER COPPER
Terminal form BALL BALL BALL BALL BALL BALL
Terminal pitch 0.75 mm 0.75 mm 0.75 mm 0.75 mm 0.75 mm 0.75 mm
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
width 6.2 mm 6.2 mm 6.2 mm 6.2 mm 6.2 mm 6.2 mm
Maker SK Hynix - - SK Hynix SK Hynix SK Hynix
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