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MAR9067CBBAF

Description
Standard SRAM, 16KX1, 125ns, CMOS, CDIP24,
Categorystorage    storage   
File Size365KB,10 Pages
ManufacturerPlessey Semiconductors Ltd.
Download Datasheet Parametric Compare View All

MAR9067CBBAF Overview

Standard SRAM, 16KX1, 125ns, CMOS, CDIP24,

MAR9067CBBAF Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPlessey Semiconductors Ltd.
package instructionDIP, DIP24,.6
Reach Compliance Codeunknown
Maximum access time125 ns
I/O typeSEPARATE
JESD-30 codeR-XDIP-T24
JESD-609 codee0
memory density16384 bit
Memory IC TypeSTANDARD SRAM
memory width1
Number of terminals24
word count16384 words
character code16000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize16KX1
Output characteristics3-STATE
Package body materialCERAMIC
encapsulated codeDIP
Encapsulate equivalent codeDIP24,.6
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
power supply5 V
Certification statusNot Qualified
Filter level38535Q/M;38534H;883B
Maximum standby current0.0016 A
Minimum standby current2 V
Maximum slew rate0.03 mA
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
total dose100k Rad(Si) V

MAR9067CBBAF Related Products

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Description Standard SRAM, 16KX1, 125ns, CMOS, CDIP24, Standard SRAM, 16KX1, 125ns, CMOS, CDIP20, Standard SRAM, 16KX1, 125ns, CMOS, CDIP20, Standard SRAM, 16KX1, 125ns, CMOS, CDFP24, Standard SRAM, 16KX1, 125ns, CMOS, CDFP24,
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
Maker Plessey Semiconductors Ltd. Plessey Semiconductors Ltd. Plessey Semiconductors Ltd. Plessey Semiconductors Ltd. Plessey Semiconductors Ltd.
package instruction DIP, DIP24,.6 DIP, DIP20,.3 DIP, DIP20,.3 DFP, FL24,.4 DFP, FL24,.4
Reach Compliance Code unknown unknown unknown unknown unknown
Maximum access time 125 ns 125 ns 125 ns 125 ns 125 ns
I/O type SEPARATE SEPARATE SEPARATE SEPARATE SEPARATE
JESD-30 code R-XDIP-T24 R-XDIP-T20 R-XDIP-T20 R-XDFP-F24 R-XDFP-F24
JESD-609 code e0 e0 e0 e0 e0
memory density 16384 bit 16384 bit 16384 bit 16384 bit 16384 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 1 1 1 1 1
Number of terminals 24 20 20 24 24
word count 16384 words 16384 words 16384 words 16384 words 16384 words
character code 16000 16000 16000 16000 16000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C
organize 16KX1 16KX1 16KX1 16KX1 16KX1
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material CERAMIC CERAMIC CERAMIC CERAMIC CERAMIC
encapsulated code DIP DIP DIP DFP DFP
Encapsulate equivalent code DIP24,.6 DIP20,.3 DIP20,.3 FL24,.4 FL24,.4
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE FLATPACK FLATPACK
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
power supply 5 V 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Filter level 38535Q/M;38534H;883B 38535Q/M;38534H;883B 38535V;38534K;883S 38535V;38534K;883S 38535Q/M;38534H;883B
Maximum standby current 0.0016 A 0.0016 A 0.0016 A 0.0016 A 0.0016 A
Minimum standby current 2 V 2 V 2 V 2 V 2 V
Maximum slew rate 0.03 mA 0.03 mA 0.03 mA 0.03 mA 0.03 mA
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V
surface mount NO NO NO YES YES
technology CMOS CMOS CMOS CMOS CMOS
Temperature level MILITARY MILITARY MILITARY MILITARY MILITARY
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE FLAT FLAT
Terminal pitch 2.54 mm 2.54 mm 2.54 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL DUAL DUAL
total dose 100k Rad(Si) V 100k Rad(Si) V 100k Rad(Si) V 100k Rad(Si) V 100k Rad(Si) V
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