MAR9067FSBAF datasheet, PDF - EEWORLD Datasheet

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MAR9067FSBAF: DescriptionStandard SRAM, 16KX1, 125ns, CMOS, CDFP24,; Categorystorage storage; File Size365KB，10 Pages; ManufacturerPlessey Semiconductors Ltd.

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Standard SRAM, 16KX1, 125ns, CMOS, CDFP24,

MAR9067FSBAF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Plessey Semiconductors Ltd.
package instruction	DFP, FL24,.4
Reach Compliance Code	unknown
Maximum access time	125 ns
I/O type	SEPARATE
JESD-30 code	R-XDFP-F24
JESD-609 code	e0
memory density	16384 bit
Memory IC Type	STANDARD SRAM
memory width	1
Number of terminals	24
word count	16384 words
character code	16000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	16KX1
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	DFP
Encapsulate equivalent code	FL24,.4
Package shape	RECTANGULAR
Package form	FLATPACK
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Filter level	38535V;38534K;883S
Maximum standby current	0.0016 A
Minimum standby current	2 V
Maximum slew rate	0.03 mA
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	FLAT
Terminal pitch	1.27 mm
Terminal location	DUAL
total dose	100k Rad(Si) V

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MAR9067FSBAF Related Products

	MAR9067FSBAF	MAR9067XBBAF	MAR9067XSBAF	MAR9067CBBAF	MAR9067FBBAF
Description	Standard SRAM, 16KX1, 125ns, CMOS, CDFP24,	Standard SRAM, 16KX1, 125ns, CMOS, CDIP20,	Standard SRAM, 16KX1, 125ns, CMOS, CDIP20,	Standard SRAM, 16KX1, 125ns, CMOS, CDIP24,	Standard SRAM, 16KX1, 125ns, CMOS, CDFP24,
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Plessey Semiconductors Ltd.	Plessey Semiconductors Ltd.	Plessey Semiconductors Ltd.	Plessey Semiconductors Ltd.	Plessey Semiconductors Ltd.
package instruction	DFP, FL24,.4	DIP, DIP20,.3	DIP, DIP20,.3	DIP, DIP24,.6	DFP, FL24,.4
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Maximum access time	125 ns	125 ns	125 ns	125 ns	125 ns
I/O type	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE
JESD-30 code	R-XDFP-F24	R-XDIP-T20	R-XDIP-T20	R-XDIP-T24	R-XDFP-F24
JESD-609 code	e0	e0	e0	e0	e0
memory density	16384 bit	16384 bit	16384 bit	16384 bit	16384 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	1	1	1	1	1
Number of terminals	24	20	20	24	24
word count	16384 words	16384 words	16384 words	16384 words	16384 words
character code	16000	16000	16000	16000	16000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
organize	16KX1	16KX1	16KX1	16KX1	16KX1
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	CERAMIC	CERAMIC	CERAMIC	CERAMIC	CERAMIC
encapsulated code	DFP	DIP	DIP	DIP	DFP
Encapsulate equivalent code	FL24,.4	DIP20,.3	DIP20,.3	DIP24,.6	FL24,.4
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLATPACK	IN-LINE	IN-LINE	IN-LINE	FLATPACK
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Filter level	38535V;38534K;883S	38535Q/M;38534H;883B	38535V;38534K;883S	38535Q/M;38534H;883B	38535Q/M;38534H;883B
Maximum standby current	0.0016 A	0.0016 A	0.0016 A	0.0016 A	0.0016 A
Minimum standby current	2 V	2 V	2 V	2 V	2 V
Maximum slew rate	0.03 mA	0.03 mA	0.03 mA	0.03 mA	0.03 mA
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V
surface mount	YES	NO	NO	NO	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	FLAT	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	FLAT
Terminal pitch	1.27 mm	2.54 mm	2.54 mm	2.54 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
total dose	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V

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