3940
3940
ADVANCED DATASHEET – 4/9/03
(Subject to change without notice.)
H-BRIDGE POWER
MOSFET CONTROLLER
The A3940 was designed specifically for driving high power DC
motors in automotive applications. The A3940 provides four high current gate
drive outputs capable of driving a wide range of power N-channel MOSFETs.
Bootstrap capacitors are utilized to provide the above battery supply
voltage required for N-channel FETs. An internal charge pump for the high-
side will allow for DC (100% duty cycle) operation of the bridge.
PHASE and ENABLE input terminals are provided for use in
controlling the speed and direction of a DC motor with externally applied
PWM control signals.
Protection features include supply under-voltage and over-voltage,
programmable deadtime adjustment for cross-conduction protection, thermal
shutdown, and motor lead short-to-supply and short-to-ground protection.
The A3940 is available in 28L low profile (1mm) e-TSSOP
packaging (LP) which has an exposed pad solderable to PCB layers for
improved thermal and electrical performance. Also, it is available in the wide-
body, SOIC (LW) package.
VDRAIN 1
LSS 2
GLB 3
SB 4
GHB 5
CB 6
VIN 7
VREG13 8
CA 9
GHA 10
SA 11
GLA 12
VBB 13
CP2 14
28 VDSTH
27 IDEAD
26 LONG
25 RESET
24 PHASE
23 ENABLE
A3940LP, LW
22 SR
21 MODE
20 VREG5
19 OVSET
18 FAULT
17 GND
16 CP1
15 VCP
ABSOLUTE MAXIMUM RATINGS
Load Supply Voltages
V
BB,
Vdrain, CP1 ………….
-0.6 V to +40 V
Logic Input/Output Voltage Range,
V
in/out …………….
-0.3 V to +6.5 V
LSS Voltage................................
-2 V to + 6.5 V
Pins SA/SB ....................................
-2 V to +45 V
Pins GHA/GHB ................................
-2 to + 55 V
Pins CA/CB………….………….…-0.6
to + 55 V
Pins CP2/VCP/VIN ..……………–0.6
to + 52 V
Operating Temperature Range,
T
A
............................
-40
°C
to +135
°C
Max. Junction Temperature, T
J
...............
+150
°C
Storage Temperature Range,
T
S
.............................
-55
°C
to +150
°C
------------------------------------------------------------
T
HERMAL
I
MPEDANCE
, typical (Ta = +25
°C)*
A3940LP,
θ
JA …………………….
28
°C/W
A3940LW,
θ
JA
……………………
44
°C/W
*
Measured with JEDEC standard “High K” 4 layer
board.
FEATURES
High Current Gate Drive for Driving
a Wide Range of N-ch MOSFET’s
Charge Pump to boost gate drive at
low battery input conditions.
Bootstrapped Gate Drive with
Charge Pump for 100% Duty Cycle
Synchronous Rectification
Fault Diagnostic Output
Adjustable Dead Time Cross-
Conduction Protection
Motor Lead Short-to-Ground
and Short-to- Supply
Protection.
Thermal Shutdown
Gate Drive for External
Reverse Battery MOSFET
Under-voltage Protection
Over-voltage Protection
-40
°C
to 150
°C,
Tj Operation
H-BRIDGE POWER MOSFET CONTROLLER
Functional Block Diagram
0.47 uF
Cr
Cp
VBB
CP1
CP2
VCP
VIN
1 uF
47K
10K
+VBAT
VREG5
-
+
VREG13
+5Vreg
Charge
Pump
Linear
Reg
10 uF
+
BSS84/110 or other low
Idss, p-ch FET.
Reverse
Battery
Protection
0.1 uF
LONG
IDEAD
Dead-Time
Adjust
VBB
VDRAIN
+
OVSET
Undervoltage/
Overvoltage
Detect
Top-off
Charge
Pump
CA
C
BOOT
High
Side
Driver
VDSTH
Short to Ground
Protection
GHA
ENABLE
PHASE
MODE
RESET
SR
LSS
GND
Vdrain Open
Short-to-Battery
Short-to-Ground
VBB Over-voltage
VBB Under-voltage
VREG13 Under-voltage
TSD
FAULT
VREG13
SA
Control
Logic
Short to Supply
Protection
Low
Side
Driver
GLA
O.D.
GLB
GATE
DRIVE B
CB
SB
GHB
e-PAD
3940
14MAY02
H-BRIDGE POWER MOSFET CONTROLLER
ELECTRICAL CHARACTERISTICS:
Unless noted, otherw
ise: TA = - 40°C to +135°C, TJ = - 40°C to +150°C, V
BB
= 7 to 40
V,
Vin < Vbb,
Cp = 0.47 uF, Cr = 1 uF, Creg5 = 0.1 uF, Creg13 = 10 uF, Cboot = .1 uF, PWM (Sq.Wave) Freq = 22.5 kHz
. Typ.
values sim. at 25
°C, Max/Min values sim. over TJ
range. Negative current flows out of designated pin.
Characteristics
V
BB
Quiescent Currents
Symbol
Test Conditions
RESET=1, Vbb=Vin=40 V, Coast, stopped,
CP disabled, Idead = 170 uA.
RESET=1, Vbb=Vin=15 V, Coast, stopped,
CP disabled, Idead = 170 uA.
RESET=1, Vbb=40 V, Vin=Vcp, Coast,
stopped, Idead = 170 uA. Icp=2.5 mA
RESET=1, Vbb=15 V, Vin=Vcp, Coast,
stopped, Idead = 170 uA. Icp=2.5 mA
RESET = 0
Min.
Typ.
11.0
8.7
10.5
10.3
Max.
14.0
10.4
12
12
1
Units
mA
mA
mA
mA
uA
V
mV
mV
mA
I
VBB
VREG5 Output Voltage
VREG5 Line Regulation
VREG5 Load Regulation
VREG5 Short -circuit Current
VCP Output Voltage Levels
V
REG5
V
REG5
V
REG5
Ilimit5
V
CP
no load
I
REG5
= 4.0 mA
I
REG5
= 0 - 4.0 mA, Vbb = 40 V
Vbb = 40 V, VREG5 = 0
V
BB
= 14 - 40 V, Icp = 15 mA
V
BB
= 7 V, Icp = 15 mA
4.5
5
5
5
28
5.5
V
BB
+10
11.7
15
V
BB
+11
13
V
BB
+ 12
13.8
V
V
mA
VCP Gate Drive
VCP Output Voltage Ripple
VCP Pump-up time
I
CP
V
CP
Tup
SR=1, MODE=0, ENABLE=PWM
Icp = 15 mA, V
BB
= 14 - 40 V
Vin = VCP, V
BB
= 14 - 40 V
Vin = VCP, V
BB
= 7 V
500
2.5
3.5
1.4
12.6
13.3
0.7
2
2
60
14.0
mV/pp
mS
mS
mA
V
V
mV
mV
mA
uS
mS
VREG13 Input Current (Quiescent)
VREG13 Output Voltage
VREG13 Dropout Voltage
VREG13 Line Regulation
VREG13 Load Regulation
VREG13 Short -circuit Current
GO-SLEEP Response Time
WAKE-UP Response Time
Ivin
V
REG13
V
REGDV
V
REG13
V
REG13
Ilimit13
RESET=1, Vbb=Vin=40 V, Coast, stopped.
V
IN
= 15 V, no load
I
REG13
= 15mA, V
IN
= 11 - 14 V
Vin = 15 - 40 V, I
REG13
= 15 mA
Vin = 40 V, I
REG13
= 0 - 15 mA
Vin = 40 V, VREG13 = 0 (pulse)
RESET = 0 to VREG5 = 4 V
RESET = 1 to VREG13_UV cleared.
Tsleep
Twake
4
25
1.4
H-BRIDGE POWER MOSFET CONTROLLER
Characteristics
Control Logic
Logic Input Voltages
V
IN(1)
V
IN(1)
V
IN(0)
Logic Input Current
I
IN(1)
I
IN(0)
I
IN(0)
HIGH level input (Logic 1), except RESET.
HIGH level input (Logic 1) for RESET
LOW level input (Logic 0)
V
IN
= 2.0
V
IN
= .8, except RESET(0)
V
IN
= .8, RESET(0)
-
2.0
2.2
–
–
-
-
–
40
16
-
-
.8
100
40
1
V
uA
uA
uA
V
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Gate Drives, GHx, GLx ( internal SOURCE or upper switch stages)
Output HIGH Voltage
V
DSL
(HI)
GHx: I
xU
= -10 mA, Vsx = 0
GLx: I
xU
= -10 mA, Vlss = 0
Source Current (pulsed)
Ixu
V
SDU
= 10 V, Tj = 25
°C
V
SDU
= 10 V, Tj = 135
°C
Source ON Resistance
R
SDU
(ON)
I
xU
= -150 mA, Tj = 25
°C
I
xU
= -150 mA, Tj = 135
°C
Source Load Rise-time (20 - 80%)
Trise
Measure V
DSL
. Cload = 3300 pF.
400
4
7
90
13
23
V
REG 13
– 2.2
V
REG 13
– 0.2
700
V
REG13
V
REG13
V
V
mA
mA
Ω
Ω
nS
Gate Drives, GHx, GLx ( internal SINK or lower switch stages)
Sink Current (pulsed)
I
xL
V
DSL
= 10 V, Tj = 25
°C
V
DSL
= 10 V, Tj = 135
°C
Sink ON Resistance
R
DSL
(ON)
I
xL
= +150 mA, Tj = 25
°C
I
xL
= +150 mA, Tj = 135
°C
Sink Load Fall-time (20 - 80%)
Tfall
Measure V
DSL
. Cload = 3300 pF.
550
1.8
3.0
70
6.0
7.5
800
mA
mA
Ω
Ω
nS
Gate Drives, GHx, GLx (General)
Propagation Delay
Prop Delay Differences
Dead Time (between GHx, GLx
transitions of same phase)
t
PROP
t
PROP
t
DEAD
Logic inputs to unloaded GHx, GLx
Grouped by rising and falling edge transitions.
Long = 0, Rdead =12.1K (Idead =167uA)
Long = 0, Rdead =499K (Idead =4uA)
Long = 1, Rdead =12.1K (Idead =167uA)
Long = 1, Rdead =499K (Idead =4uA)
8.5
0.3
215
50
nS
nS
uS
10.5
uS
uS
320
uS
Notes:
For
GH
X
: V
SDU
= V
CX
– V
GHX
,
V
DSL
= V
GHX
– V
SX
,
V
DSL
(HI) = V
CX
– V
SDU
– V
SX
.
For
GL
X
: V
SDU
= V
REG13
– V
GLX
, V
DSL
= V
GLX
– V
LSS
, V
DSL
(HI) = V
REG13
– V
SDU
– V
LSS
.
H-BRIDGE POWER MOSFET CONTROLLER
Characteristics
Bootstrap Circuit
Diode Forward Current Limits
Diode Forward Drop
Diode Resistance
Top-off CP Source Current at Cx
Icx
Vd
Rd
Icx
3V <[ (VREG13 = 13.5V) - Vcx] < 12V
Id = 10 mA
Rd(100) = [Vd(150) - Vd(50)] / 100
Vcx-Vsx=8V, Vbb=40V, GHx=1(no load)
140
0.8
1.5
50
1000
2.0
6.5
mA
V
Ω
uA
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Fault/Protection Circuits
VBB Under-voltage
VBB UV Hysteresis
VREG13 Under-voltage
VREG13 Hysteresis
VBB Over-voltage
Vbbuv
Vbbuvhy
V13uv
V13uvhy
Vbbov
VBB decreasing
Recovery = Vbbuv + Vbbuvhy
Vin decreasing
Recovery = V13uv + V13uvhy
Vbb increasing, Vovset = 0 V
Vbb increasing, Vovset = 0.45 V
Vbb increasing, Vovset = 0.9 V
VBB OV Hysteresis
OVSET Input Current
Short-to-Ground Threshold
Vbbovhy
Iovset
Vstg
Recovery = Vbbov - Vbbovhy
Vovset = 0 to 0.9 V
0.5 < Vdsth < 3.0 V
Vdsth –
0.4
Short-to-Battery Threshold
Vstb
0.5 < Vdsth < 3.0 V
Vdsth –
0.4
Vdrain/Open-Bridge Threshold
VDSTH Input Current
Vdrain/Open-Bridge Current
Vdoth
Idsth
Ivdrain
If Vdrain < Vdoth a Bridge fault occurs
1.0V < Vdsth < 3.0 V
RESET = 0
RESET = 1, Vdsth < 3.0 V
Fault Latch Clear Pulsewidth
Fault Clear Prop Delay
Fault Detection Noise Filter
Fault Output
Tlatch
Tprop
Tnoise
Vout(0)
Iout(1)
Thermal Shutdown Temp.
Thermal Shutdown Hysteresis
T
JTSD
∆T
J
Iout = 5 mA, faults negated.
Vout = 5V, open-drain, fault asserted.
Temperature increasing.
Recovery = T
JTSD
-
∆T
J
172
12
RESET= 0, pulse
From RESET=1 to FAULT=0
0.15
2.0
1.7
0.4
1
1
4.5
200
7.5
200
16
24
32.5
2.1
5.25
450
8.25
450
19.6
28
36.4
3.1
6.0
700
9.0
700
22
30.5
39
4.1
1.4
Vdsth +
0.3
Vdsth +
0.3
3
1
1
0.5
2.0
V
uA
uA
mA
uS
uS
uS
V
uA
°C
°C
V
V
mV
V
mV
V
V
V
V
uA
V
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