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2N5640RL

Description
30V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, PLASTIC, TO-226AA, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size348KB,35 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

2N5640RL Overview

30V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, PLASTIC, TO-226AA, 3 PIN

2N5640RL Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresEUROPEAN PART NUMBER
ConfigurationSINGLE
Minimum drain-source breakdown voltage30 V
Maximum drain-source on-resistance100 Ω
FET technologyJUNCTION
Maximum feedback capacitance (Crss)4 pF
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)225
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
JFETs Switching
N–Channel — Depletion
2N5640
1 DRAIN
3
GATE
2 SOURCE
1
2
3
CASE 29–04, STYLE 5
TO–92 (TO–226AA)
Rating
Drain–Source Voltage
Drain–Gate Voltage
Reverse Gate–Source Voltage
Forward Gate Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VDG
VGSR
IGF
PD
R
q
JA
TJ
Tstg
Value
30
30
30
10
350
2.8
357
– 65 to +150
– 65 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (IG = 10
µAdc,
VDS = 0)
Gate Reverse Current
(VGS = –15 Vdc, VDS = 0)
(VGS = –15 Vdc, VDS = 0, TA = 100°C)
Drain Cutoff Current
(VDS = 15 Vdc, VGS = –6.0 Vdc)
(VDS = 15 Vdc, VGS = –6.0 Vdc, TA = 100°C)
V(BR)GSS
IGSS
ID(off)
1.0
1.0
nAdc
µAdc
1.0
1.0
nAdc
µAdc
30
Vdc
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current(1)
(VDS = 20 Vdc, VGS = 0)
Drain–Source On–Voltage
(ID = 3.0 mAdc, VGS = 0)
Static Drain–Source On Resistance
(ID = 1.0 mAdc, VGS = 0)
1. Pulse Test: Pulse Width
IDSS
VDS(on)
rDS(on)
5.0
0.5
100
mAdc
Vdc
Ohms
v
300
m
s, Duty Cycle
v
3.0%.
REV 1
4–130
Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N5640RL Related Products

2N5640RL 2N5640RL1 2N5640RLRA 2N5640RLRE 2N5640RLRM 2N5640ZL1
Description 30V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, PLASTIC, TO-226AA, 3 PIN 30V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, PLASTIC, TO-226AA, 3 PIN 30V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, PLASTIC, TO-226AA, 3 PIN 30V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, PLASTIC, TO-226AA, 3 PIN 30V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, PLASTIC, TO-226AA, 3 PIN TRANSISTOR 30 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, PLASTIC, TO-226AA, 3 PIN, FET General Purpose Small Signal
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible
Parts packaging code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Contacts 3 3 3 3 3 3
Reach Compliance Code compli compli compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 30 V 30 V 30 V 30 V 30 V 30 V
Maximum drain-source on-resistance 100 Ω 100 Ω 100 Ω 100 Ω 100 Ω 100 Ω
FET technology JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION
Maximum feedback capacitance (Crss) 4 pF 4 pF 4 pF 4 pF 4 pF 4 pF
JEDEC-95 code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609 code e0 e0 e0 e0 e0 e0
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) 225 225 225 225 225 225
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1 1 1
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