2N5640RLRE datasheet, PDF - EEWORLD Datasheet

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2N5640RLRE: Description30V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, PLASTIC, TO-226AA, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size348KB，35 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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2N5640RLRE Overview

30V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, PLASTIC, TO-226AA, 3 PIN

2N5640RLRE Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	30 V
Maximum drain-source on-resistance	100 Ω
FET technology	JUNCTION
Maximum feedback capacitance (Crss)	4 pF
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	225
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

JFETs Switching

N–Channel — Depletion

2N5640

1 DRAIN

GATE

2 SOURCE

CASE 29–04, STYLE 5

TO–92 (TO–226AA)

Rating

Drain–Source Voltage

Drain–Gate Voltage

Reverse Gate–Source Voltage

Forward Gate Current

Total Device Dissipation @ TA = 25°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Junction Temperature Range

Storage Temperature Range

Symbol

VDS

VDG

VGSR

IGF

Tstg

Value

350

2.8

357

– 65 to +150

Unit

Vdc

mAdc

mW/°C

°C/W

°C

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Gate–Source Breakdown Voltage (IG = 10

µAdc,

VDS = 0)

Gate Reverse Current

(VGS = –15 Vdc, VDS = 0)

(VGS = –15 Vdc, VDS = 0, TA = 100°C)

Drain Cutoff Current

(VDS = 15 Vdc, VGS = –6.0 Vdc)

(VDS = 15 Vdc, VGS = –6.0 Vdc, TA = 100°C)

V(BR)GSS

IGSS

—

ID(off)

—

1.0

nAdc

µAdc

1.0

nAdc

µAdc

—

Vdc

ON CHARACTERISTICS

Zero–Gate–Voltage Drain Current(1)

(VDS = 20 Vdc, VGS = 0)

Drain–Source On–Voltage

(ID = 3.0 mAdc, VGS = 0)

Static Drain–Source On Resistance

(ID = 1.0 mAdc, VGS = 0)

1. Pulse Test: Pulse Width

IDSS

VDS(on)

rDS(on)

5.0

—

0.5

100

mAdc

Vdc

Ohms

300

s, Duty Cycle

3.0%.

REV 1

4–130

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N5640RLRE Related Products

	2N5640RLRE	2N5640RL1	2N5640RLRA	2N5640RL	2N5640RLRM	2N5640ZL1
Description	30V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, PLASTIC, TO-226AA, 3 PIN	30V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, PLASTIC, TO-226AA, 3 PIN	30V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, PLASTIC, TO-226AA, 3 PIN	30V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, PLASTIC, TO-226AA, 3 PIN	30V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, PLASTIC, TO-226AA, 3 PIN	TRANSISTOR 30 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, PLASTIC, TO-226AA, 3 PIN, FET General Purpose Small Signal
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Contacts	3	3	3	3	3	3
Reach Compliance Code	compli	compli	compli	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	30 V	30 V	30 V	30 V	30 V	30 V
Maximum drain-source on-resistance	100 Ω	100 Ω	100 Ω	100 Ω	100 Ω	100 Ω
FET technology	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION
Maximum feedback capacitance (Crss)	4 pF	4 pF	4 pF	4 pF	4 pF	4 pF
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
JESD-609 code	e0	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	225	225	225	225	225	225
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1	1

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