2NU41TPA2 datasheet, PDF - EEWORLD Datasheet

2NU41TPA2: DescriptionDIODE 2 A, 1000 V, SILICON, RECTIFIER DIODE, Rectifier Diode; CategoryDiscrete semiconductor diode; File Size68KB，2 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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2NU41TPA2 Overview

DIODE 2 A, 1000 V, SILICON, RECTIFIER DIODE, Rectifier Diode

Parameter Name	Attribute value
package instruction	O-PALF-W2
Reach Compliance Code	unknow
ECCN code	EAR99
application	SUPER FAST RECOVERY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	3 V
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	77 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Maximum output current	2 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	1000 V
Maximum reverse current	100 µA
Maximum reverse recovery time	0.1 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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