EEWORLDEEWORLDEEWORLD

Part Number

Search

BAT54T

Description
DIODE 0.2 A, SILICON, SIGNAL DIODE, PLASTIC, SC-75, 3 PIN, Signal Diode
CategoryDiscrete semiconductor    diode   
File Size89KB,9 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance  
Download Datasheet Parametric View All

BAT54T Online Shopping

Suppliers Part Number Price MOQ In stock  
BAT54T - - View Buy Now

BAT54T Overview

DIODE 0.2 A, SILICON, SIGNAL DIODE, PLASTIC, SC-75, 3 PIN, Signal Diode

BAT54T Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSC-75
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.15 W
Certification statusNot Qualified
Maximum reverse recovery time0.005 µs
surface mountYES
technologySCHOTTKY
Terminal surfaceTIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30

BAT54T Preview

BAT54T
Single Schottky barrier diode
Rev. 01 — 14 December 2009
Product data sheet
1. Product profile
1.1 General description
Single planar Schottky barrier diode with an integrated guard ring for stress protection,
encapsulated in a SOT416 (SC-75) ultra small Surface-Mounted Device (SMD) plastic
package.
1.2 Features
Low forward voltage: max. 400 mV
Low capacitance: max. 10 pF
Ultra small SMD plastic package
AEC-Q101 qualified
1.3 Applications
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diode
1.4 Quick reference data
Table 1.
Symbol
I
F
V
R
V
F
[1]
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
I
F
= 10 mA
[1]
Conditions
Min
-
-
-
Typ
-
-
-
Max
200
30
400
Unit
mA
V
mV
Pulse test: t
p
300
μs; δ ≤
0.02.
NXP Semiconductors
BAT54T
Single Schottky barrier diode
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
anode
not connected
cathode
1
2
3
1
3
2
n.c.
006aaa436
Simplified outline
Graphic symbol
3. Ordering information
Table 3.
Ordering information
Package
Name
BAT54T
SC-75
Description
plastic surface-mounted package; 3 leads
Version
SOT416
Type number
4. Marking
Table 4.
BAT54T
Marking codes
Marking code
ZW
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
I
FRM
I
FSM
Parameter
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak
forward current
t
p
1 s;
δ ≤
0.5
square wave
t
p
= 100
μs
t
p
= 1 ms
t
p
= 10 ms
P
tot
T
j
T
amb
T
stg
[1]
Conditions
Min
-
-
-
Max
30
200
300
Unit
V
mA
mA
-
-
-
[1]
4
2
1
150
150
+150
+150
A
A
A
mW
°C
°C
°C
total power dissipation
junction temperature
ambient temperature
storage temperature
T
amb
25
°C
-
-
−55
−65
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
BAT54T_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 14 December 2009
2 of 9
NXP Semiconductors
BAT54T
Single Schottky barrier diode
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
[1]
[2]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1]
Min
-
-
Typ
-
-
Max
833
350
Unit
K/W
K/W
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Soldering point of cathode tab.
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
I
R
t
rr
C
d
[1]
[2]
Conditions
[1]
Min
-
-
-
-
-
-
[2]
Typ
-
-
-
-
-
-
-
-
Max
240
320
400
500
800
2
5
10
Unit
mV
mV
mV
mV
mV
μA
ns
pF
reverse current
reverse recovery
time
diode capacitance
Pulse test: t
p
300
μs; δ ≤
0.02.
V
R
= 25 V
-
-
V
R
= 1 V; f = 1 MHz
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
BAT54T_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 14 December 2009
3 of 9
NXP Semiconductors
BAT54T
Single Schottky barrier diode
10
3
I
F
(mA)
10
2
(1) (2) (3)
msa892
10
3
I
R
(μA)
10
2
(2)
(1)
msa893
10
10
1
(1)
(2) (3)
1
(3)
10
−1
0
0.4
0.8
V
F
(V)
1.2
10
−1
0
10
20
V
R
(V)
30
(1) T
amb
= 125
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
(1) T
amb
= 125
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
Fig 1.
Forward current as a function of forward
voltage; typical values
Fig 2.
Reverse current as a function of reverse
voltage; typical values
msa891
15
C
d
(pF)
10
5
0
0
10
20
V
R
(V)
30
f = 1 MHz; T
amb
= 25
°C
Fig 3.
Diode capacitance as a function of reverse voltage; typical values
BAT54T_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 14 December 2009
4 of 9
NXP Semiconductors
BAT54T
Single Schottky barrier diode
8. Test information
t
r
D.U.T.
R
S
= 50
Ω
V = V
R
+
I
F
×
R
S
I
F
SAMPLING
OSCILLOSCOPE
R
i
= 50
Ω
V
R
mga881
t
p
t
10 %
+
I
F
trr
t
90 %
input signal
output signal
(1)
(1) I
R
= 1mA
Fig 4.
Reverse recovery time test circuit and waveforms
9. Package outline
1.8
1.4
3
0.45
0.15
0.95
0.60
1.75 0.9
1.45 0.7
1
2
0.30
0.15
1
0.25
0.10
04-11-04
Dimensions in mm
Fig 5.
Package outline SOT416 (SC-75)
BAT54T_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 14 December 2009
5 of 9

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 138  2668  2845  1375  1066  3  54  58  28  22 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号