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2SB1017G-R-TF3-T

Description
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, HALOGEN FREE, TO-220F, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size60KB,2 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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2SB1017G-R-TF3-T Overview

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, HALOGEN FREE, TO-220F, 3 PIN

2SB1017G-R-TF3-T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTO-220AB
package instructionHALOGEN FREE, TO-220F, 3 PIN
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)4 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)25 W
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)9 MHz
Base Number Matches1
UNISONIC TECHNOLOGIES CO., LTD
2SB1017
Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
PNP SILICON EPITAXIAL
TRANSISTOR
DESCRIPTION
The UTC
2SB1017
is a PNP silicon epitaxial transistor suited to be
used in power amplifier applications.
FEATURES
* Low base drive
ORDERING INFORMATION
Ordering Number
Lead Free
2SB1017L-x-TF3-T
2SB1017L-x-TF3-T
Halogen Free
2SB1017G-x-TF3-T
Package
TO-220F
Pin Assignment
1
2
3
B
C
E
Packing
Tube
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Free
(1) T: Tube
(2) TF3: TO-220F
(3) x: refer to Classification of h
FE
(4) Halogen Free, L: Lead Free
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 2
QW-R219-010.a

2SB1017G-R-TF3-T Related Products

2SB1017G-R-TF3-T 2SB1017L-Y-TF3-T 2SB1017G-O-TF3-T 2SB1017G-Y-TF3-T 2SB1017L-O-TF3-T 2SB1017L-R-TF3-T
Description Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, HALOGEN FREE, TO-220F, 3 PIN Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-220F, 3 PIN Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, HALOGEN FREE, TO-220F, 3 PIN Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, HALOGEN FREE, TO-220F, 3 PIN Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-220F, 3 PIN Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-220F, 3 PIN
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Parts packaging code TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
package instruction HALOGEN FREE, TO-220F, 3 PIN LEAD FREE, TO-220F, 3 PIN HALOGEN FREE, TO-220F, 3 PIN HALOGEN FREE, TO-220F, 3 PIN LEAD FREE, TO-220F, 3 PIN LEAD FREE, TO-220F, 3 PIN
Contacts 3 3 3 3 3 3
Reach Compliance Code compli compli compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Maximum collector current (IC) 4 A 4 A 4 A 4 A 4 A 4 A
Collector-emitter maximum voltage 80 V 80 V 80 V 80 V 80 V 80 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 120 70 120 70 40
JEDEC-95 code TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 25 W 25 W 25 W 25 W 25 W 25 W
surface mount NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 9 MHz 9 MHz 9 MHz 9 MHz 9 MHz 9 MHz
Base Number Matches 1 1 1 1 1 1
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