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2SC2655Y

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size121KB,4 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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2SC2655Y Overview

Transistor

2SC2655Y Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codecompli
Maximum collector current (IC)2 A
ConfigurationSingle
Minimum DC current gain (hFE)120
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.9 W
surface mountNO
Base Number Matches1
UTC 2SC2655
NPN EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER APPLICATIONS
POWER SWITCHING APPLICATIONS
FEATURES
*Low saturation voltage
V
CE(sat)
= 0.5V (Max.)
*High speed switching time
t
stg
=1.0μs (Typ.)
1
TO-92NL
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS
( Ta=25°C ,unless otherwise specified )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current(Pluse)
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
* PW≦16ms,Duty Cycle≦50%.
SYMBOL
V
CBO
V
CEO
V
EBO
Ic
Icp*
I
B
Pc
T
j
T
STG
VALUE
50
50
5
2
3
0.5
900
150
-55 ~ +150
UNIT
V
V
V
A
A
A
mW
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL
V
(BR)
CEO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE
(sat)
V
BE
(sat)
f
T
Cob
TEST CONDITIONS
Ic= 10mA I
B
= 0
V
CB
=50V I
E
= 0
V
EB
= 5V Ic=0
V
CE
=2V,Ic=0.5A
V
CE
=2V,Ic=1.5A
Ic=1A,I
B
=0.05A
Ic=1A,I
B
=0.05A
V
CE
=2V, Ic=0.5A
V
CB
= 10V, I
E
= 0, f=1MHz
MIN
50
TYP
MAX
1.0
1.0
240
0.5
1.2
UNIT
V
μA
μA
70
40
100
30
V
V
MHz
pF
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R211-013,B

2SC2655Y Related Products

2SC2655Y 2SC2655O
Description Transistor Transistor
Reach Compliance Code compli compli
Maximum collector current (IC) 2 A 2 A
Configuration Single Single
Minimum DC current gain (hFE) 120 70
Maximum operating temperature 150 °C 150 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.9 W 0.9 W
surface mount NO NO
Base Number Matches 1 1
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