VISHAY
BAT85
Vishay Semiconductors
Schottky Diode
Features
• For general purpose applications.
• This diode features low turn-on voltage. This
device is protected by a PN junction guard ring
against excessive voltage, such as electrostatic
discharges
• This diode is also available in the MiniMELF case
with type designation BAS85.
94 9367
Mechanical Data
Case:
DO-35 Glass Case
Weight:
130 mg
Packaging Codes/Options:
TR / 10 k per 13 " reel (52 mm tape), 50 k/box
TAP / 10 k per Ammo tape (52 mm tape), 50 k/box
Parts Table
Part
BAT85
Ordering code
BAT85-TR or BAT85-TAP
-
Marking
Remarks
Tape and Reel / Ammopack
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Continuous reverse voltage
Forward continuous current
Peak forward current
Surge forward current
Power dissipation
1)
Test condition
T
amb
= 25 °C
T
amb
= 25 °C
t
p
< 1 s, T
amb
= 25 °C
T
amb
= 65 °C
Part
Symbol
V
R
I
F
I
FM
I
FSM
P
tot
Value
30
200
1)
300
1)
600
1)
200
1)
Unit
V
mA
mA
mA
mW
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambient air
Junction temperature
Ambient operating temperature
range
Storage temperature range
1)
Test condition
Symbol
R
thJA
T
j
T
amb
T
S
Value
430
1)
125
- 65 to + 125
- 65 to + 150
Unit
°C/W
°C
°C
°C
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
Document Number 85669
Rev. 1.3, 31-Mar-04
www.vishay.com
1
BAT85
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse breakdown voltage
Leakage current
Forward voltage
Test condition
I
R
= 10
µA
(pulsed)
V
R
= 25 V
Pulse test t
p
< 300
µs, δ
< 2 %,
I
F
= 0.1 mA
Pulse test t
p
< 300
µs, δ
< 2 %,
I
F
= 1 mA
Pulse test t
p
< 300
µs, δ
< 2 %,
I
F
= 10 mA
Pulse test t
p
< 300
µs, δ
< 2 %,
I
F
= 30 mA
Pulse test t
p
< 300
µs, δ
< 2 %,
I
F
= 100 mA
Diode capacitance
Reverse recovery time
V
R
= 1 V, f = 1 MHz
I
F
= 10 mA, I
R
= 10 mA,
I
rr
= 1 mA
Part
Symbol
V
(BR)R
I
R
V
F
V
F
V
F
V
F
V
F
C
tot
t
rr
0.5
0.8
10
5
Min
30
2
0.24
0.32
0.4
Typ.
Max
VISHAY
Unit
V
µA
V
V
V
V
V
pF
ns
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
250
P
tot
- Power Dissipation ( mW )
1000
I
F
- Forward Current ( mA )
200
150
100
50
0
100
T
j
= 125
°C
25
°C
- 40
°C
10
1
0.1
0.01
0
50
100
150
200
0
18533
T
amb
- Ambient Temperature (
°C
)
18534
0.2
0.4
0.6
0.8
1
V
F
- Forward Voltage ( V )
1.2
Fig. 1 Admissible Power Dissipation vs. Ambient Temperature
Fig. 2 Typical Instantaneous Forward Characteristics
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2
Document Number 85669
Rev. 1.3, 31-Mar-04
BAT85
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4
Document Number 85669
Rev. 1.3, 31-Mar-04
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