2SA758C datasheet, PDF - EEWORLD Datasheet

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2SA758C: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size53KB，2 Pages; ManufacturerInchange Semiconductor

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2SA758C Overview

Transistor

2SA758C Parametric

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknow
Base Number Matches	1

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INCHANGE Semiconductor

isc

Product Specification

2SA758

isc

Silicon PNP Power Transistor

DESCRIPTION

·High

Power Dissipation-

: P

= 80W(Max.)@T

=25℃

·Collector-Emitter

Breakdown Voltage-

: V

(BR)CEO

= -110V(Min.)

·Complement

to Type 2SC898

APPLICATIONS

·Designed

for use in audio amplifier power output stage and

general purpose applications.

ABSOLUTE MAXIMUM RATINGS(T

=25

℃)

SYMBOL

PARAMETER

VALUE

UNIT

CBO

Collector-Base Voltage

-130

CEO

Collector-Emitter Voltage

-110

EBO

Emitter-Base Voltage

-5

Collector Current-Continuous

-7

Collector Current-Peak

Collector Power Dissipation

=25℃

Junction Temperature

-12

150

℃

stg

Storage Temperature

-55~150

℃

isc Website：www.iscsemi.cn

2SA758C Related Products

	2SA758C	2SA758	2SA758A
Description	Transistor	Transistor	Transistor
Reach Compliance Code	unknow	unknow	unknow
Base Number Matches	1	1	1

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