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2SA758

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size53KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

2SA758 Overview

Transistor

2SA758 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
2SA758
isc
Silicon PNP Power Transistor
DESCRIPTION
·High
Power Dissipation-
: P
C
= 80W(Max.)@T
C
=25℃
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= -110V(Min.)
·Complement
to Type 2SC898
APPLICATIONS
·Designed
for use in audio amplifier power output stage and
general purpose applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
-130
V
V
CEO
Collector-Emitter Voltage
-110
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current-Continuous
-7
A
I
CM
Collector Current-Peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
-12
A
P
C
80
W
T
j
150
T
stg
Storage Temperature
-55~150
isc Website:www.iscsemi.cn

2SA758 Related Products

2SA758 2SA758C 2SA758A
Description Transistor Transistor Transistor
Reach Compliance Code unknow unknow unknow
Base Number Matches 1 1 1
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