INCHANGE Semiconductor
isc
Product Specification
2SA758
isc
Silicon PNP Power Transistor
DESCRIPTION
·High
Power Dissipation-
: P
C
= 80W(Max.)@T
C
=25℃
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= -110V(Min.)
·Complement
to Type 2SC898
APPLICATIONS
·Designed
for use in audio amplifier power output stage and
general purpose applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
-130
V
V
CEO
Collector-Emitter Voltage
-110
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current-Continuous
-7
A
I
CM
Collector Current-Peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
-12
A
P
C
80
W
T
j
150
℃
T
stg
Storage Temperature
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
2SA758
isc
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= -50mA; R
BE
=
∞
-110
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= -5mA; I
E
= 0
-130
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= -5mA; I
C
= 0
-5
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= -5A; I
B
= -1A
-1.8
V
V
BE
(on)
Base-Emitter On Voltage
I
C
= -1A; V
CE
= -5V
-1.5
V
I
CBO
Collector Cutoff Current
V
CB
= -30V; I
E
= 0
-1.0
mA
h
FE-1
DC Current Gain
I
C
= -1A; V
CE
= -5V
25
200
h
FE-2
DC Current Gain
I
C
= -5A; V
CE
= -5V
20
f
T
Current-Gain—Bandwidth Product
I
C
= -1A; V
CE
= -5V
20
MHz
h
FE-1
Classifications
A
25-60
B
50-120
C
100-200
isc Website：www.iscsemi.cn
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