Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| package instruction | FLANGE MOUNT, O-MBFM-P2 |
| Reach Compliance Code | compli |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 5 A |
| Collector-emitter maximum voltage | 400 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 3 |
| JEDEC-95 code | TO-3 |
| JESD-30 code | O-MBFM-P2 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 140 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | NPN |
| Maximum power consumption environment | 50 W |
| Maximum power dissipation(Abs) | 50 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | PIN/PEG |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 3 MHz |
| VCEsat-Max | 5 V |
| Base Number Matches | 1 |
| 2SC1308 | 2N3055S | 2N3055HV | 2N6257 | 2SC1413A | 2SC1413 | |
|---|---|---|---|---|---|---|
| Description | Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin | Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, | Power Bipolar Transistor, 15A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, | Power Bipolar Transistor, 20A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin | Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin | Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin |
| Is it Rohs certified? | incompatible | incompatible | conform to | conform to | incompatible | incompatible |
| package instruction | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 |
| Reach Compliance Code | compli | compli | compli | compli | compli | compli |
| Shell connection | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
| Maximum collector current (IC) | 5 A | 15 A | 15 A | 20 A | 5 A | 5 A |
| Collector-emitter maximum voltage | 400 V | 60 V | 120 V | 40 V | 500 V | 500 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| JEDEC-95 code | TO-3 | TO-3 | TO-3 | TO-3 | TO-3 | TO-3 |
| JESD-30 code | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 |
| Maximum operating temperature | 140 °C | 175 °C | 200 °C | 200 °C | 140 °C | 140 °C |
| Package body material | METAL | METAL | METAL | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN |
| Maximum power consumption environment | 50 W | 90 W | 90 W | 200 W | 50 W | 50 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO | NO |
| Terminal form | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |
| Minimum DC current gain (hFE) | 3 | 5 | 5 | 15 | - | - |
| JESD-609 code | e0 | e0 | - | - | e0 | e0 |
| Maximum power dissipation(Abs) | 50 W | 117 W | - | 150 W | 50 W | 50 W |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Nominal transition frequency (fT) | 3 MHz | 2.5 MHz | 2.5 MHz | 0.2 MHz | - | - |
| VCEsat-Max | 5 V | 3 V | 3 V | - | 1 V | 1 V |
| Is it lead-free? | - | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead |
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