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2SC1922

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size115KB,3 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

2SC1922 Overview

Transistor

2SC1922 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1922
DESCRIPTION
・With
TO-3 package
・High
breakdown voltage
・High
speed switching
APPLICATIONS
・For
TV horizontal output applications
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
固电
导½
PARAMETER
CONDITIONS
Collector-base voltage
Collector-emitter voltage
INC
Emitter-base voltage
Collector current
ANG
H
MIC
E SE
Open emitter
Open base
Open collector
T
C
=25℃
DUC
ON
VALUE
1500
800
6
2.5
50
150
OR
T
UNIT
V
V
V
A
W
Total power dissipation
Junction temperature
Storage temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance from junction to case
VALUE
2.5
UNIT
℃/W
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