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2SK2823(TE85L)

Description
2SK2823(TE85L)
CategoryDiscrete semiconductor    The transistor   
File Size332KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SK2823(TE85L) Overview

2SK2823(TE85L)

2SK2823(TE85L) Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
2SK2823
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2823
For Portable Equipment
High Speed Switch Applications
Analog Switch Applications
High input impedance
1.5 V gate drive
Low gate threshold voltage: V
th
= 0.5~1.0 V
Small package
Unit: mm
Marking
Equivalent Circuit
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
V
DS
V
GSS
I
D
P
D
T
ch
T
stg
Rating
20
10
100
200
150
−55~150
Unit
V
V
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
TO-236MOD
SC-59
2-3F1F
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This transistor is electrostatic sensitive device.
Please handle with caution.
1
2007-11-01

2SK2823(TE85L) Related Products

2SK2823(TE85L) 2SK2823(TE85L,F)
Description 2SK2823(TE85L) 2SK2823(TE85L,F)
Reach Compliance Code unknow unknow
Base Number Matches 1 1

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