2SJ378
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L
−π−MOSV)
2
2SJ378
Relay Drive, DC−DC Converter and Motor Drive
Applications
4-V gate drive
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
Enhancement mode
: R
DS (ON)
= 0.16
Ω
(typ.)
: |Y
fs
| = 4.0 S (typ.)
Unit: mm
: I
DSS
=
−100 μA
(max) (V
DS
=
−60
V)
: V
th
=
−0.8
to
−2.0
V (V
DS
=
−10
V, I
D
=
−1
mA)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (R
GS
= 20 kΩ)
Gate−source voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
−60
−60
±20
−5
−20
1.3
273
−5
0.13
150
−55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
Pulse (Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalenche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
―
―
2-8M1B
Weight: 0.54 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to ambient
Symbol
R
th (ch−a)
Max
96.1
Unit
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
=
−25
V, T
ch
= 25°C (initial), L = 14.84 mH, R
G
= 25
Ω,
I
AR
=
−5
A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
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2009-09-29
2SJ378
Electrical Characteristics
(Ta = 25°C)
Characteristics
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
t
on
t
f
t
off
Q
g
Q
gs
Q
gd
V
DD
≈ −48
V, V
GS
=
−10
V, I
D
=
−5
A
V
DS
=
−10
V, V
GS
= 0 V, f = 1 MHz
Test Condition
V
GS
= ±16 V, V
DS
= 0 V
V
DS
=
−60
V, V
GS
= 0 V
I
D
=
−10
mA, V
GS
= 0 V
V
DS
=
−10
V, I
D
=
−1
mA
V
GS
=
−4
V, I
D
=
−2.5
A
V
GS
=
−10
V, I
D
=
−2.5
A
V
DS
=
−10
V, I
D
=
−2.5
A
Min
—
—
−60
−0.8
—
—
2.0
—
—
—
—
Typ.
—
—
—
—
0.24
0.16
4.0
630
95
290
25
Max
±10
−100
—
−2.0
0.28
0.19
—
—
—
—
—
pF
Unit
μA
μA
V
V
Ω
S
Turn−on time
Switching time
Fall time
—
45
—
ns
—
55
—
Turn−off time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
—
—
—
—
200
22
16
6
—
—
—
—
nC
Source−Drain Ratings and Characteristics
(Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
I
DR
I
DRP
V
DSF
t
rr
Qrr
Test Condition
—
—
I
DR
=
−5
A, V
GS
= 0 V
I
DR
=
−5
A, V
GS
= 0 V
dl
DR
/ dt = 50 A /
μS
Min
—
—
—
—
—
Typ.
—
—
—
80
0.1
Max
−5
−20
1.7
—
—
Unit
A
A
V
ns
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Part No. (or abbreviation code)
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Lot No.
Note 4
J378
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2009-09-29
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