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IXGQ25N90Y4

Description
Insulated Gate Bipolar Transistor, 25A I(C), 900V V(BR)CES,
CategoryDiscrete semiconductor    The transistor   
File Size421KB,6 Pages
ManufacturerIXYS
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IXGQ25N90Y4 Overview

Insulated Gate Bipolar Transistor, 25A I(C), 900V V(BR)CES,

IXGQ25N90Y4 Parametric

Parameter NameAttribute value
MakerIXYS
package instruction,
Reach Compliance Codecompliant
Maximum collector current (IC)25 A
Collector-emitter maximum voltage900 V
Gate-emitter maximum voltage20 V
Number of components1
Maximum operating temperature150 °C
Maximum power dissipation(Abs)150 W
VCEsat-Max4.5 V

IXGQ25N90Y4 Related Products

IXGQ25N90Y4
Description Insulated Gate Bipolar Transistor, 25A I(C), 900V V(BR)CES,
Maker IXYS
Reach Compliance Code compliant
Maximum collector current (IC) 25 A
Collector-emitter maximum voltage 900 V
Gate-emitter maximum voltage 20 V
Number of components 1
Maximum operating temperature 150 °C
Maximum power dissipation(Abs) 150 W
VCEsat-Max 4.5 V
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